Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …

White light emitting diodes (LEDs) based on III-nitride InGaN/GaN quantum wells currently
offer the highest overall efficiency for solid state lighting applications. Although current …

High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …

We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on
the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were …

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

The development of efficient green light-emitting diodes (LEDs) is of paramount importance
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …

We propose a semiconductor–insulator–semiconductor (SIS) heterojunction diode
consisting of monolayer (1-L) MoS2, hexagonal boron nitride (h-BN), and epitaxial p-GaN …

Epitaxy of single-crystalline materials laid the foundation for numerous electronics as a core
technology. Nevertheless, because the single-crystalline epilayers are covalently bonded to …

Microscale light-emitting diodes (µLEDs) have been extensively employed for solid-state
lighting applications. However, the ratio of the sidewall area to the emitting area increases …

This review paper presents an overview of the optical characterization techniques for Indium
Gallium Nitride (InGaN) quantum well (QW) structures at a nanoscale. The two major …