Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications

B Dieny, M Chshiev - Reviews of Modern Physics, 2017 - APS
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

S Mangin, D Ravelosona, JA Katine, MJ Carey… - Nature materials, 2006 - nature.com
Devices that show a magnetic anisotropy normal to the film surface hold great promise
towards faster and smaller magnetic bits in data-storage applications. We describe an …

Nonlinear auto-oscillator theory of microwave generation by spin-polarized current

A Slavin, V Tiberkevich - IEEE Transactions on Magnetics, 2009 - ieeexplore.ieee.org
This paper formulates a general analytic approach to the theory of microwave generation in
magnetic nano-structures driven by spin-polarized current and reviews analytic results …

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

KS Lee, SW Lee, BC Min, KJ Lee - Applied Physics Letters, 2013 - pubs.aip.org
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane
charge current due to the spin Hall effect. We find that in the high dam** regime, the …

Spin-torque oscillator using a perpendicular polarizer and a planar free layer

D Houssameddine, U Ebels, B Delaët, B Rodmacq… - Nature materials, 2007 - nature.com
Spintronics materials have recently been considered for radio-frequency devices such as
oscillators by exploiting the transfer of spin angular momentum between a spin-polarized …

Data storage: review of Heusler compounds

Z Bai, LEI Shen, G Han, YP Feng - Spin, 2012 - World Scientific
In the recent decade, the family of Heusler compounds has attracted tremendous scientific
and technological interest in the field of spintronics. This is essentially due to their …

Device implications of spin-transfer torques

JA Katine, EE Fullerton - Journal of Magnetism and Magnetic Materials, 2008 - Elsevier
This article examines spin-transfer torques from the perspective of three technological
applications: hard disk drives, magnetic random access memory (MRAM), and current …

Magnetoresistive random access memory: The path to competitiveness and scalability

JG Zhu - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
This paper provides an in-depth review of the magnetoresistive random access memory
technology and its developments over the past decade. Both the traditional field-driven and …

Emerging three-terminal magnetic memory devices

SW Lee, KJ Lee - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
Spin-transfer torques can switch magnetizations via a current passing through a magnetic
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …

Super magnetic loss induced by tunable dam** coefficient through Ni nanoparticles size matching in magnetic carbon

H Li, X Li, M Cheng, Y Sun, W Chen, X Liu - Carbon, 2023 - Elsevier
For dielectric-magnetic dual loss absorbers, magnetic loss capacity is the main contributor
for improving microwave absorbing performances. Shape anisotropy induced by different …