Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
Devices that show a magnetic anisotropy normal to the film surface hold great promise
towards faster and smaller magnetic bits in data-storage applications. We describe an …
towards faster and smaller magnetic bits in data-storage applications. We describe an …
Nonlinear auto-oscillator theory of microwave generation by spin-polarized current
This paper formulates a general analytic approach to the theory of microwave generation in
magnetic nano-structures driven by spin-polarized current and reviews analytic results …
magnetic nano-structures driven by spin-polarized current and reviews analytic results …
Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane
charge current due to the spin Hall effect. We find that in the high dam** regime, the …
charge current due to the spin Hall effect. We find that in the high dam** regime, the …
Spin-torque oscillator using a perpendicular polarizer and a planar free layer
D Houssameddine, U Ebels, B Delaët, B Rodmacq… - Nature materials, 2007 - nature.com
Spintronics materials have recently been considered for radio-frequency devices such as
oscillators by exploiting the transfer of spin angular momentum between a spin-polarized …
oscillators by exploiting the transfer of spin angular momentum between a spin-polarized …
Data storage: review of Heusler compounds
In the recent decade, the family of Heusler compounds has attracted tremendous scientific
and technological interest in the field of spintronics. This is essentially due to their …
and technological interest in the field of spintronics. This is essentially due to their …
Device implications of spin-transfer torques
This article examines spin-transfer torques from the perspective of three technological
applications: hard disk drives, magnetic random access memory (MRAM), and current …
applications: hard disk drives, magnetic random access memory (MRAM), and current …
Magnetoresistive random access memory: The path to competitiveness and scalability
JG Zhu - Proceedings of the IEEE, 2008 - ieeexplore.ieee.org
This paper provides an in-depth review of the magnetoresistive random access memory
technology and its developments over the past decade. Both the traditional field-driven and …
technology and its developments over the past decade. Both the traditional field-driven and …
Emerging three-terminal magnetic memory devices
SW Lee, KJ Lee - Proceedings of the IEEE, 2016 - ieeexplore.ieee.org
Spin-transfer torques can switch magnetizations via a current passing through a magnetic
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …
Super magnetic loss induced by tunable dam** coefficient through Ni nanoparticles size matching in magnetic carbon
H Li, X Li, M Cheng, Y Sun, W Chen, X Liu - Carbon, 2023 - Elsevier
For dielectric-magnetic dual loss absorbers, magnetic loss capacity is the main contributor
for improving microwave absorbing performances. Shape anisotropy induced by different …
for improving microwave absorbing performances. Shape anisotropy induced by different …