Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

It has been over 200 years since people recognized the presence of infrared radiation, and
developed methods to capture this signal. However, current material systems and …

Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …

We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (λ∼ 4.3 µm
at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation …

Type-II InAs/GaSb superlattices (T2SLs), a system of multi-interacting quantum wells, was
introduced by Nobel Laureate L. Esaki in the 1970s. Since then, this material system has …

XBnn mid-wave infrared (MWIR) detector arrays aimed at high operating temperature (HOT)
applications, also known as barrier detectors or “bariodes”, are based on device elements …

Taking advantage of the favorable Gibbs free energies, atomic layer deposited (ALD)
aluminum oxide (Al 2 O 3) was used as a novel approach for passivation of type II …

We report the influence of the contact do** profile on the performance of superlattice-
based minority carrier unipolar devices for mid-wave infrared detection. Unlike in a …

In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice
pin photodetector grown directly on Si substrate is demonstrated and characterized …

In this paper, we report the direct growth and characterization of a mid-wave infrared
InAs/GaSb type-II superlattice nBp photodetector on a GaAs substrate. The design consists …