A Systematic Study of Charge-Trap** Phenomenon in FeFET on FDSOI via Low-Frequency Noise Spectroscopy
Q Zhu, L Xu, Y Wang, Y Zhao… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
The presence of charge trap** dynamics in general ferroelectric-gate field effect
transistors (FeFETs) is significant in the memory window (MW) modulation and optimization …
transistors (FeFETs) is significant in the memory window (MW) modulation and optimization …