A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
Ultra-wide bandgap semiconductor Ga2O3 power diodes
J Zhang, P Dong, K Dang, Y Zhang, Q Yan… - Nature …, 2022 - nature.com
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC
P Dong, J Zhang, Q Yan, Z Liu, P Ma… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this work, we show that the-Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 …
A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
In this Letter, high-performance vertical NiO/β-Ga 2 O 3 p–n heterojunction diodes without
any electric field managements were reported. The devices show a low leakage current …
any electric field managements were reported. The devices show a low leakage current …
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga's Figure of Merit Over 1 GW/cm2
We report a vertical (001) β-Ga2O3 field-plated (FP) Schottky barrier diode (SBD) with a
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 μm was used to …
2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Junction Termination Extension
This work demonstrates vertical Ga2O3 Schottky barrier diodes (SBDs) with a novel junction
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …
termination extension (JTE) comprising multiple layers of sputtered p-type nickel oxide …
Field-Plated Ga2O3 Trench Schottky Barrier Diodes With a BV2/ of up to 0.95 GW/cm2
We report the realization of field-plated vertical Ga 2 O 3 trench Schottky barrier diodes
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
(SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With …
Low defect density and small I− V curve hysteresis in NiO/β-Ga2O3 pn diode with a high PFOM of 0.65 GW/cm2
In this Letter, we report a high-performance NiO/β-Ga 2 O 3 pn heterojunction diode with an
optimized interface by annealing. The electrical characteristics of the pn diode without …
optimized interface by annealing. The electrical characteristics of the pn diode without …