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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
High-K materials and metal gates for CMOS applications
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …
[HTML][HTML] Ferroelectric materials for neuromorphic computing
Ferroelectric materials are promising candidates for synaptic weight elements in neural
network hardware because of their nonvolatile multilevel memory effect. This feature is …
network hardware because of their nonvolatile multilevel memory effect. This feature is …
Antisolvents in perovskite solar cells: importance, issues, and alternatives
Organic–inorganic metal halide perovskite solar cells are emerging as potential solar
energy harvesting tools and can be a tough competitor to already matured solar cell …
energy harvesting tools and can be a tough competitor to already matured solar cell …
High-κ gate dielectrics: Current status and materials properties considerations
GD Wilk, RM Wallace, JM Anthony - Journal of applied physics, 2001 - pubs.aip.org
Many materials systems are currently under consideration as potential replacements for SiO
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
High dielectric constant oxides
J Robertson - The European Physical Journal-Applied Physics, 2004 - cambridge.org
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …
Lanthanum hafnium oxide dielectrics
KY Ahn, L Forbes - US Patent 7,235,501, 2007 - Google Patents
US PATENT DOCUMENTS 6,642,573 B1 11/2003 Halliyal et al. 6,645,882 B1 11/2003
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …
Halliyal et al. 6,020,243 A 2/2000 Wallace et al. 6,646,307 B1 11/2003 Yu et al. 6,025,627 A …