[图书][B] Semiconducting Silicides: Basics, Formation, Properties

VE Borisenko - 2013 - books.google.com
Semiconductors are well known as the main materials of modem solid-state electronics.
They have held the attention of researches and engineers since the brilliant invention of the …

Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics

M Akasaka, T Iida, T Nemoto, J Soga, J Sato… - Journal of Crystal …, 2007 - Elsevier
Magnesium siliside (Mg2Si) crystals have been grown using the vertical Bridgman method
in a non-wetting growth environment, achieved by the use of an anti-adhesion coating on …

Melt growth and characterization of Mg2Si bulk crystals

D Tamura, R Nagai, K Sugimoto, H Udono, I Kikuma… - Thin Solid Films, 2007 - Elsevier
We have grown Mg2Si bulk crystals by the vertical Bridgman method using a high-purity Mg
(6N-up) source. The grown crystals were single-phase Mg2Si and had well-developed …

First-principles studies of intrinsic point defects in magnesium silicide

A Kato, T Yagi, N Fukusako - Journal of Physics: Condensed …, 2009 - iopscience.iop.org
We have studied intrinsic point defects in magnesium silicide, Mg 2 Si, by density-functional
theory. Evaluating the formation energies of point defects, we show that n-type electric …

Probing the Mg2Si/Si (1 1 1) heterojunction for photovoltaic applications

A Shevlyagin, I Chernev, N Galkin, A Gerasimenko… - Solar Energy, 2020 - Elsevier
Abstract n-Mg 2 Si/p-Si heterojunction solar cell with a 1.4 µm thick unintentionally doped
(n= 3× 10 17 cm− 3) silicide epitaxial layer on p-Si (1 1 1)(p= 5× 10 14 cm− 3) was grown by …

Infrared photoresponse from pn-junction Mg2Si diodes fabricated by thermal diffusion

H Udono, Y Yamanaka, M Uchikoshi… - Journal of Physics and …, 2013 - Elsevier
We fabricated pn-junction diodes by thermal diffusion of Ag acceptor into n-type melt-grown
Mg2Si single-crystalline substrates (electron concentration= 2× 1015cm− 3) to investigate …

Optoelectronic properties of Mg2Si semiconducting layers with high absorption coefficients

T Kato, Y Sago, H Fujiwara - Journal of Applied Physics, 2011 - pubs.aip.org
In an attempt to develop a low-cost material for solar cell devices, polycrystalline magnesium
silicide (poly-Mg 2 Si) semiconducting layers have been prepared by applying rf magnetron …

Molecular Dynamics Simulation of the Mechanical Properties of Single-Crystal Bulk Mg2Si

R Yu, P Zhai, G Li, L Liu - Journal of electronic materials, 2012 - Springer
This paper reports a study of the mechanical behavior of single-crystal bulk Mg 2 Si by the
molecular dynamics method in view of the effect of temperature and strain rate. A modified …

Synthesis and characterization of Mg 2 Si/Si nanocomposites prepared from MgH 2 and silicon, and their thermoelectric properties

T Yi, S Chen, S Li, H Yang, S Bux, Z Bian… - Journal of Materials …, 2012 - pubs.rsc.org
Silicon (Si) nanoparticles embedded in a Mg2Si matrix (Mg2Si/xSi) have been successfully
synthesized at 623 K from MgH2 and Bi containing Si nanoparticle powders. The use of …

and semiconductors for photovoltaic applications: Calculations based on density-functional theory and the Bethe-Salpeter equation

VK Solet, SK Pandey - Physical Review Applied, 2024 - APS
We conduct a comprehensive assessment of the electronic and optical properties, as well as
photovoltaic (PV) performance parameters, for low-cost, nontoxic Mg 2 Si and Ca 2 Si using …