Excellent physical properties of wide and ultrawide bandgap semiconductor materials have
significantly advanced the miniaturization of high-power devices, radio frequency devices …

The high increase in interface density has become the main bottleneck for heat dissipation
in gallium nitride/aluminum nitride (AlN)/silicon carbide (SiC) based nanodevices. In this …

Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-
based electronics. While AlN transition layers are commonly employed in the heteroepitaxial …

Wide and ultrawide bandgap semiconductors, such as GaN, play a crucial role in high-
power applications, yet their performance is often constrained by thermal management …

At the nanoscale, thermal boundary conductance (TBC) and thermal conductivity are not
intrinsic properties of interfaces or materials but depend on the nearby environment …

Gallium nitride offers an ideal material platform for next-generation high-power electronics
devices, which enable a spectrum of applications. The thermal management of the ever …

3D integration of multiple microelectronic devices improves size, weight, and power while
increasing the number of interconnections between components. One integration method …

Confined geometries are used to increase measurement sensitivity to thermal boundary
resistance at buried SiO2 interfaces with frequency-domain thermoreflectance (FDTR). We …

We report an investigation of the bulk optical, bulk acoustic, and surface acoustic phonons in
thin films of turbostratic boron nitride (t-BN) and cubic boron nitride (c-BN) grown on B …

Abstracts Efficient heat dissipation is a critical consideration in the design of high-
performance electronics packaging. However, the current die-attach techniques suffer from …