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Contacts for molybdenum disulfide: interface chemistry and thermal stability
In this review on contacts with MoS2, we consider reports on both interface chemistry and
device characteristics. We show that there is considerable disagreement between reported …
device characteristics. We show that there is considerable disagreement between reported …
Theoretical comparison between the flicker noise behavior of graphene and of ordinary semiconductors
M Macucci, P Marconcini - Journal of Sensors, 2020 - Wiley Online Library
Graphene is a material of particular interest for the implementation of sensors, and the
ultimate performance of devices based on such a material is often determined by its flicker …
ultimate performance of devices based on such a material is often determined by its flicker …
Impact of sandwiched strain periodic multilayer AlN/GaN on strain and crystalline quality of a-plane GaN
A Kamarundzaman, AS Abu Bakar, A Azman… - Scientific reports, 2021 - nature.com
We demonstrated high-quality single crystalline a-plane undoped-gallium nitride grown on a
nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The …
nonpatterned r-plane sapphire substrate via metal–organic chemical vapor deposition. The …
[HTML][HTML] Prediction of Two-Dimensional Janus Transition-Metal Chalcogenides: Robust Ferromagnetic Semiconductor with High Curie Temperature
Z Wang, AH Qureshi, Y Duan, Y Liu, Y Wang, J Zhu… - Molecules, 2024 - mdpi.com
Two-dimensional (2D) ferromagnetic semiconductors (FM SCs) provide an ideal platform for
the development of quantum information technology in nanoscale devices. However, many …
the development of quantum information technology in nanoscale devices. However, many …
Computational modeling, simulation and tight–binding analysis of electronic characteristics of defective germanene nanoribbons for future applications of high …
In this research, the electronic characteristics of germanene sheet and nanoribbons using
the computational modeling, simulation and tight binding approximation are investigated …
the computational modeling, simulation and tight binding approximation are investigated …
Klein tunnelling and Hartman effect in graphene junctions with proximity exchange field
J Tepper, J Barnaś - Journal of Physics: Condensed Matter, 2019 - iopscience.iop.org
Tunnelling of electrons in graphene-based junctions is studied theoretically. Graphene is
assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic …
assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic …
Tunable wavevector filtering in borophane based normal metal-barrier-normal metal junctions
P Das, S De Sarkar, AK Ghosh - Journal of Physics: Condensed …, 2020 - iopscience.iop.org
We study the transport properties of Dirac electrons across a two-dimensional normal metal-
barrier-normal metal interface in monolayer borophane. We analyse the transmission …
barrier-normal metal interface in monolayer borophane. We analyse the transmission …