The ultrawide-band gap semiconductor Ga 2 O 3 as a photodetector heteroepitaxially grown
on Si is expected to be widely used for weak solar-blind signal detections because the …

Photoelectronic properties of orthorhombic undoped κ-Ga2O3 epitaxial thin films, grown on
sapphire substrates by metal–organic vapour phase epitaxy, were evaluated under X-ray …

A photodetector is a type of optoelectronic device with excellent photoelectric conversion
abilities, which has especially important applications in many fields such as optical …

Orthorhombic gallium oxide (κ-Ga 2 O 3) is an ultra-wide bandgap semiconductor with great
potential in new generation electronics. Its application is hindered at present by the limited …

Aluminum scandium nitride barrier layers increase the available sheet charge carrier density
in gallium nitride‐based high‐electron‐mobility transistors and boost the output power of …

Beta-gallium oxide (β-Ga2O3) is emerging as a promising ultrawide band gap (UWBG)
semiconductor, which is vital for high-power, high-frequency electronics and deep-UV …

We investigated atomic site occupancy for the Si dopant in Si-doped κ-Ga2O3 (001) using
photoelectron spectroscopy (PES) and photoelectron holography (PEH). From PES and …

The interfacial properties of a planar SnO/κ-Ga2O3 p–n heterojunction have been
investigated by capacitance–voltage (C–V) measurements following a methodological …

Radiation detectors have gained significant attention due to their extensive applications in
high-energy physics, medical diagnostics, aerospace, and nuclear radiation protection …

Transient surface photovoltage (SPV) spectroscopy, optical absorption, and
photoconductivity (PC) were applied to study electronic transitions in (-201) β-Ga 2 O 3 and …