Self-organization of nanostructures in semiconductor heteroepitaxy
C Teichert - Physics Reports, 2002 - Elsevier
In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …
Step bunching, step wandering and faceting: self-organization at Si surfaces
K Yagi, H Minoda, M Degawa - Surface science reports, 2001 - Elsevier
Step bunching, in-phase step wandering and faceting are new morphological evolutions
from smooth vicinal surfaces. They are formed by giving changes of externally controlled …
from smooth vicinal surfaces. They are formed by giving changes of externally controlled …
Nontypical Wulff-Shape Silicon Nanosheets with High Catalytic Activity
Nanostructured silicon with an equilibrium shape has exhibited hydrogen evolution reaction
activity mainly owing to its high surface area, which is distinct from that of bulk silicon. Such a …
activity mainly owing to its high surface area, which is distinct from that of bulk silicon. Such a …
Naturally chiral metal surfaces as enantiospecific adsorbents
The creation of solid surfaces with intrinsic chirality is one promising route for develo**
novel enantiospecific processes. This paper focuses on high Miller index surfaces of pure …
novel enantiospecific processes. This paper focuses on high Miller index surfaces of pure …
The structure of silicon surfaces from (001) to (111)
We describe the structure of silicon surfaces oriented between (001) and (111) as
determined by scanning tunneling microscopy (STM) and first-principles, total-energy …
determined by scanning tunneling microscopy (STM) and first-principles, total-energy …
Atomically accurate Si grating with 5.73 nm period
A vicinal surface of silicon is found that exhibits an atomically accurate step pattern with a
period of 5.73 nm, corresponding to 17 atomic rows per 111 terrace. It can be viewed as …
period of 5.73 nm, corresponding to 17 atomic rows per 111 terrace. It can be viewed as …
Finding the reconstructions of semiconductor surfaces via a genetic algorithm
In this article we show that the reconstructions of semiconductor surfaces can be determined
using a genetic procedure. Coupled with highly optimized interatomic potentials, the present …
using a genetic procedure. Coupled with highly optimized interatomic potentials, the present …
Recent ARPES experiments on quasi-1D bulk materials and artificial structures
The spectroscopy of quasi-one-dimensional (1D) systems has been a subject of strong
interest since the first experimental observations of unusual line shapes in the early 1990s …
interest since the first experimental observations of unusual line shapes in the early 1990s …
1-D nanostructures grown on the Si (5 5 12) surface
We have used scanning tunneling microscopy (STM) to study the growth behavior of noble
metals deposited on the high-index Si (5512) surface. This unique surface is tilted 30.5° …
metals deposited on the high-index Si (5512) surface. This unique surface is tilted 30.5° …
Challenges in nanomaterials design
AS Edelstein, JS Murday, BB Rath - Progress in materials science, 1997 - Elsevier
When crystalline dimensions are reduced to nanometre sizes, new structures and properties
result. Because of this, considerable effort is being devoted to fabricating nanomaterials to …
result. Because of this, considerable effort is being devoted to fabricating nanomaterials to …