Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …

ABSTRACT Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact,
and energy-efficient power-electronics devices. Their wider band gaps result in higher …

Rutile germanium dioxide (r-GeO 2) has been identified as an ultrawide bandgap
semiconductor recently, featuring a bandgap of 4.68 eV—comparable to Ga 2 O 3—but …

Rutile-structured germanium oxide (r-GeO 2), an ultrawide band-gap (UWBG)
semiconductor, is a promising candidate for future high-power electronics because of its …

Recently, rutile germanium dioxide (r-GeO 2) has emerged as a novel ultra-wide bandgap
semiconductor due to its theoretical excellent properties, that is, high thermal conductivity …

Power electronics seek to improve power conversion of devices by utilizing materials with a
wide bandgap, high carrier mobility, and high thermal conductivity. Due to its wide bandgap …

Rutile compounds have exotic functional properties that can be applied for various
electronic applications; however, the limited availability of epitaxial substrates has restricted …

In this paper, we report the direct growth of ultra-wide bandgap GeO 2 film on the m-plane
sapphire substrate by pulsed laser deposition. Raman scattering and x-ray diffraction …

Rutile germanium dioxide (GeO2) has been recently theoretically identified as an ultrawide-
bandgap (UWBG) semiconductor with bandgap 4.68 eV similar to that of Ga2O3 but having …