FinFET is a multiple-gate silicon transistor structure that nowadays is attracting an extensive
attention to progress further into the nanometer era by going beyond the downscaling limit of …

This work presents an acoustic platform using solidly mounted thin-oriented lithium niobate
(LiNbO3) film on silicon (Si). A thin layer of amorphous Si eliminates a conductive layer …

We propose in this letter a new passivation method to get rid of parasitic surface conduction
in oxidized high resistivity (HR) silicon and HR silicon-on-insulator (SOI) wafers. The method …

The gap between the performance of optoelectronic components and the demands of fiber-
optic communications has narrowed significantly in recent decades. Yet, the expansion of …

This article presents shear horizontal surface acoustic wave (SH-SAW) devices with
excellent temperature stability and low loss on ultrathin Y42-cut lithium tantalate film on …

The shear horizontal surface acoustic wave (SH-SAW) resonators with excellent quality
factor and temperature stability were fabricated on 42° YX-LiTaO3/SiO2/sapphire substrate …

In this paper, the nonlinear behavior of coplanar waveguide (CPW) transmission lines
fabricated on Si and high-resistivity (HR) Si substrates is thoroughly investigated …

In this paper, we aimed to show the potential of buried PN junctions as a substrate interface
passivation solution to increase the effective resistivity (ρ eff) figure of merit of a High …

As CMOS technology continues to scale down, allowing operation in the GHz range, it
provides the opportunity of low cost integration of analog, digital and RF functions on the …

A single-pole double-throw novel switch device in0. 18¹m SOI complementary metal-oxide
semiconductor (CMOS) process is developed for 0.9 Ghz wireless GSMsystems. The layout …