In this article, we report on demonstrating high-performance AlGaN/GaN high-electron-
mobility-transistor (HEMT) on free-standing GaN (FS-GaN) substrate with low contact …

Al x Ga 1− x N/GaN high-electron-mobility transistor (HEMT) structures are key components
in electronic devices operating at gigahertz or higher frequencies. In order to optimize such …

Ultra-thin high-Al content barrier layers can enable improved gate control and high-
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …

Recent progress in manufacturing high-electron-mobility transistors and optoelectronic
devices highlights the necessity of understanding the charge dynamics and its impact on the …

This paper systematically studies the epitaxial growth of Power and Radio Frequency (RF)
AlGaN/GaN high-electron-mobility transistors (HEMTs) on Free-Standing GaN substrates …

Semi-insulating freestanding GaN crystals are excellent candidates for substrates of GaN-
based power electronic devices. Carbon do** is believed to be currently the optimal way …

High electron mobility transistors (HEMTs) based on a wider bandgap AlGaN channel prove
more efficient for high-voltage operation. The significant advantages of AlGaN channel …

In this article, a high-composition (> 35%) thick-barrier (> 30 nm) AlGaN/AlN/GaN high-
electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low …

Abstract Gallium Nitride (GaN) is becoming increasingly attractive due to its advantages in
efficiency, switching speed, and high temperature operation. Although the performance of …

The study of heat dissipation from GaN high-electron-mobility transistors (HEMT) is
important for devising an effective thermal management strategy. In this article, chip-level …