We show that four narrow zigzag dice lattice ribbons, which have the minimal widths among
their separate categories, constitute a unique collection of systems to study physics related …

The performance of dual‐gate GaAs‐nanowire field‐effect‐transistor (FET) is investigated as
a charge‐qubit device operating at room temperature. In compatibility with the state‐of‐the …

Ribbons of two-dimensional lattices have properties depending sensitively on the
morphology of the two edges. For regular ribbons with two parallel straight edges, the atomic …

We study the exciton states in the symmetrically biased dice model, the electronic structures
of which have an isolated flat band between two dispersive bands. At 1/3 or 2/3 filling, the …

The current work describes a novel method of growing thin films of stable crystalline ST12-
Ge, a high pressure polymorph of Ge, on Si substrate by a nonequilibrium VLS technique …

In the current article, a substrate engineered patterned array of square-shaped features of
size 1.5 μm× 1.5 μm comprising of< 111>/[100]-planes of p-Si substrate has been developed …

The current work explores a geometrically engineered dual gate GaAs nanowire FET with
state of the art miniaturized dimensions for high performance charge qubit operation at room …

A continuum theoretical model for describing curling behavior of free-standing nanofilms
was given in this paper. Surface stress, surface elasticity (surface Young's modulus), surface …

The article deals with the modeling of gate voltage controlled resonant tunneling transport in
a CMOS compatible double quantum dot channel nanowire FET. The appropriate applied …

The current work explores the geometrical engineering of a state-of-the-art miniaturized
dualgate GaAs nanowire FET for high performance charge qubit operation at room …