Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman… - Materials Science in …, 2012 - Elsevier
This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
GaAs/GeSn/Ge n–i–p diodes and light emitting diodes formed via grafting
Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …
Theoretical investigation of performance enhancement in GeSn/SiGeSn type-II staggered heterojunction tunneling FET
We design a GeSn/SiGeSn type-II staggered heterojunction n-channel tunneling FET
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …
(hetero-NTFET). The energy band structures of GeSn and SiGeSn alloys were calculated by …
Heteroepitaxial growth of Sn-related group-IV materials on Si platform for microelectronic and optoelectronic applications: Challenges and Opportunities
O Nakatsuka, N Taoka, T Asano, T Yamaha… - Ecs …, 2013 - iopscience.iop.org
We have examined the heteroepitaxial growth of Ge1-xSnx and Ge1-xy SixSny layers and
investigated the crystalline and electrical properties of these Sn-related group-IV material …
investigated the crystalline and electrical properties of these Sn-related group-IV material …
Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering
Y Miao, Y Wang, H Hu, X Liu, H Su, J Zhang… - Materials Science in …, 2018 - Elsevier
High-quality low Sn-content GeSn film has been grown on tensile strained Ge/Si (100)
substrate using a physical vapor deposition reactor and no subsequent annealing was …
substrate using a physical vapor deposition reactor and no subsequent annealing was …
Thermoelectric power factor of Ge1-xSnx thin films
The Seebeck coefficients (α) and the power factors of 100 nm-thick Ge 1-x Sn x films grown
by magnetron sputtering were studied versus Sn composition (0.09≤ x≤ 0.15) in the 220 …
by magnetron sputtering were studied versus Sn composition (0.09≤ x≤ 0.15) in the 220 …
Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS
Deep levels associated with extended and point defects in MOS capacitors fabricated on
unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by …
unintentionally doped GeSn epitaxial layers on Ge-on-Si substrates have been studied by …
Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling …
In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect
transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated …
transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated …
Grafted AlGaAs/GeSn Optical Pum** Laser Operating up to 130 K
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct
bandgap and CMOS compatibility. However, further improvements in laser performance …
bandgap and CMOS compatibility. However, further improvements in laser performance …
Epitaxial growth of GeSn layers on (001),(110), and (111) Si and Ge substrates
O Nakatsuka, N Taoka, T Asano, T Yamaha… - ECS …, 2014 - iopscience.iop.org
We have examined the epitaxial growth of Ge1-Snx on Ge (001), Ge (110), Ge (111), and Si
(110) substrates and have investigated the crystalline properties of the epitaxial layers. We …
(110) substrates and have investigated the crystalline properties of the epitaxial layers. We …