Hydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride
Hydrogenated amorphous dielectric thin films are critical materials in a wide array of
technologies. In this work, we present a thorough investigation of the thermal conductivity of …
technologies. In this work, we present a thorough investigation of the thermal conductivity of …
Development of advanced hydrogenation processes for silicon solar cells via an improved understanding of the behaviour of hydrogen in silicon
The understanding and development of advanced hydrogenation processes for silicon solar
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …
cells are presented. Hydrogen passivation is incorporated into virtually all silicon solar cells …
Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD
Bulk and surface passivation by silicon nitride has become an indispensable element in
industrial production of multicrystalline silicon (mc‐Si) solar cells. Microwave PECVD is a …
industrial production of multicrystalline silicon (mc‐Si) solar cells. Microwave PECVD is a …
Influence of the high-temperature “firing” step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells
The influence of a short high-temperature step, comparable to the so-called “firing” of the
metallization on silicon solar cells, on properties of high-rate (> 0.5 nm/s) plasma deposited …
metallization on silicon solar cells, on properties of high-rate (> 0.5 nm/s) plasma deposited …
Modelling of hydrogen transport in silicon solar cell structures under equilibrium conditions
This paper presents a model for the introduction and redistribution of hydrogen in silicon
solar cells at temperatures between 300 and 700 C based on a second order backwards …
solar cells at temperatures between 300 and 700 C based on a second order backwards …
Passivation issues in active pixel CMOS image sensors
JL Regolini, D Benoit, P Morin - Microelectronics Reliability, 2007 - Elsevier
Most of the integrated circuit industry follows a final passivation process which consists of a
low temperature passivation layer deposition and a thermal anneal. This two step process is …
low temperature passivation layer deposition and a thermal anneal. This two step process is …
Hydrogenation of Si from SiNx (H) films: Characterization of H introduced into the Si
A promising method to introduce H into multicrystalline Si solar cells in order to passivate
bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has …
bulk defects is by the postdeposition annealing of a H-rich, SiNx surface layer. It has …
[HTML][HTML] Annealing prior to contact firing: A potential new approach to suppress LeTID
In this work, we introduce a new approach to suppress light and elevated temperature-
induced degradation (LeTID) by applying a pre-fire annealing step using rapid thermal …
induced degradation (LeTID) by applying a pre-fire annealing step using rapid thermal …
Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films
H Kato, N Kashio, Y Ohki, KS Seol… - Journal of applied physics, 2003 - pubs.aip.org
Photoluminescence (PL) measurements were performed on a series of hydrogenated
amorphous silicon oxynitride and silicon nitride films with different nitrogen contents …
amorphous silicon oxynitride and silicon nitride films with different nitrogen contents …
Effects of interface traps and hydrogen on the low-frequency noise of irradiated MOS devices
A re-evaluation of experimental results within the context of first-principles calculations
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …
strongly suggests that interface traps can contribute significantly to low-frequency (1/) noise …