Long-wavelength VCSELs: status and prospects
Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present
an inexpensive alternative to DFB-lasers for data communication in next-generation giga …
an inexpensive alternative to DFB-lasers for data communication in next-generation giga …
Progress in short wavelength energy-efficient high-speed vertical-cavity surface-emitting lasers for data communication
SC Tian, M Ahamed, D Bimberg - Photonics, 2023 - mdpi.com
The current progress of energy-efficient high-speed VCSELs based on GaAs substrates is
presented. Novel approaches for the design of VCSELs are presented, potentially leading to …
presented. Novel approaches for the design of VCSELs are presented, potentially leading to …
High power single mode 1300-nm superlattice based VCSEL: Impact of the buried tunnel junction diameter on performance
SA Blokhin, AV Babichev, AG Gladyshev… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
High power single mode wafer-fused 1300-nm VCSELs with a gain region based on
InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical cavity and …
InGaAs/InAlGaAs short period superlattice are fabricated. An InP-based optical cavity and …
Single-mode high-speed 1550 nm wafer fused VCSELs for narrow WDM systems
A Babichev, S Blokhin, A Gladyshev… - IEEE Photonics …, 2023 - ieeexplore.ieee.org
High power single-mode wafer fused 1550 nm VCSELs with an active region based on
InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs …
InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs …
Wafer‐fused 1300 nm VCSELs with an active region based on superlattice
S Blokhin, A Babichev, A Gladyshev… - Electronics …, 2021 - Wiley Online Library
The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on
InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double …
InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double …
20-Gbps 1300-nm range wafer-fused vertical-cavity surface-emitting lasers with InGaAs/InAlGaAs superlattice-based active region
SA Blokhin, AV Babichev, AG Gladyshev… - Optical …, 2022 - spiedigitallibrary.org
1300-nm vertical-cavity surface-emitting lasers (VCSELs) were fabricated by wafer fusion
(WF) technique and studied. The active region based on InGaAs/InAlGaAs superlattice was …
(WF) technique and studied. The active region based on InGaAs/InAlGaAs superlattice was …
A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers
SA Blokhin, MA Bobrov, NA Maleev, AA Blokhin… - Technical Physics …, 2020 - Springer
A design of a tunnel junction (TJ) based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs layers for
vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated …
vertical-cavity surface-emission lasers (VCSELs) for the 1.55-μm spectral range fabricated …
Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice
LY Karachinsky, II Novikov, AV Babichev… - Optics and …, 2019 - Springer
An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the
spectral range between 1535 and 1565 nm is proposed and realized practically. It is …
spectral range between 1535 and 1565 nm is proposed and realized practically. It is …
Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers
AV Babichev, AS Kurochkin, EC Kolodeznyi… - Semiconductors, 2018 - Springer
The results of development of the basic structure and technological conditions of growing
heterostructures for single-and dual-frequency quantum-cascade lasers are reported. The …
heterostructures for single-and dual-frequency quantum-cascade lasers are reported. The …
Impact of device topology on the performance of high-speed 1550 nm wafer-fused VCSELs
A Babichev, S Blokhin, A Gladyshev, L Karachinsky… - Photonics, 2023 - mdpi.com
A detailed experimental analysis of the impact of device topology on the performance of
1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and …
1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and …