Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …

The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

Two-dimensional molybdenum disulfide (MoS2) is a potential alternative channel material to
silicon for future scaled transistors. Scaling down the gate dielectric and maintaining a high …

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …

Motivated by the high expectation for efficient electrostatic modulation of charge transport at
very low voltages, atomically thin 2D materials with a range of bandgaps are investigated …

Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …