(57) ABSTRACT Embodiments of a Surface Acoustic Wave (SAW) device and methods of
fabrication thereof are disclosed. In some embodiments, a SAW device includes a quartz …

Systems, methods, and apparatus for an improved protection from charge injection into
layers of a device using resistive structures are described. Such resistive structures, named …

Modified silicon-on-insulator (SOI) substrates having a trap rich layer, and methods for
making such modifications. The modified regions eliminate or manage accumulated charge …

Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in
a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In …

(57) ABSTRACT Embodiments of a Surface Acoustic Wave (SAW) device having a guided
SAW structure that provides spurious mode suppression and methods of fabrication thereof …

(57) ABSTRACT A FET IC structure made using a back-side access process that mitigates or
eliminates thermal conductivity problems. In some embodiments, electrically-isolated …

(57) ABSTRACT A bonded wafer with low carrier lifetime in silicon com-prises a silicon
substrate having opposing top and bottom surfaces; a piezoelectric layer bonded over the …

(57) ABSTRACT Guided Surface Acoustic Wave (SAW) devices with improved quartz
orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a …

Systems, methods and apparatus for coexistence of high voltage and low voltage devices
and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology …

US10381998B2 - Methods for fabrication of bonded wafers and surface acoustic wave
devices using same - Google Patents US10381998B2 - Methods for fabrication of bonded …