Prospects of III-nitride optoelectronics grown on Si
The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and …
AlGaN devices and growth of device structures
The structure of a number of GaN/AlGaN devices and their associated material growth and
processing issues are examined in some detail, and extrapolations are made to predict what …
processing issues are examined in some detail, and extrapolations are made to predict what …
[HTML][HTML] Do** and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on do** and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
Stress relaxation in mismatched layers due to threading dislocation inclination
A recently observed mechanism of elastic stress relaxation in mismatched layers is
discussed. The relaxation is achieved by the inclination of pure edge threading dislocation …
discussed. The relaxation is achieved by the inclination of pure edge threading dislocation …
Strain relaxation in AlGaN multilayer structures by inclined dislocations
DM Follstaedt, SR Lee, AA Allerman… - Journal of Applied …, 2009 - pubs.aip.org
To examine further the strain relaxation produced by inclined threading dislocations in
AlGaN, a heterostructure with three AlGaN layers having successively increasing Ga …
AlGaN, a heterostructure with three AlGaN layers having successively increasing Ga …
Growth of blue GaN LED structures on 150-mm Si (1 1 1)
A Dadgar, C Hums, A Diez, J Bläsing, A Krost - Journal of Crystal Growth, 2006 - Elsevier
Up to 5.4-μm thick GaN on Si light emitting diode (LED) structures were grown by
metalorganic chemical vapor phase epitaxy (MOVPE) on 150mm Si (111) substrates. In-situ …
metalorganic chemical vapor phase epitaxy (MOVPE) on 150mm Si (111) substrates. In-situ …
Role of inclined threading dislocations in stress relaxation in mismatched layers
P Cantu, F Wu, P Waltereit, S Keller… - Journal of Applied …, 2005 - pubs.aip.org
(0001)-oriented epitaxial wurtzite III-nitride layers grown on mismatched substrates have no
resolved shear stress on the natural basal and prismatic slip planes; however, strained III …
resolved shear stress on the natural basal and prismatic slip planes; however, strained III …
Demonstration of III-nitride red LEDs on Si substrates via strain-relaxed template by InGaN decomposition layer
A III-nitride red LED with an active region temperature of 835° C on a Si substrate utilizing a
strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm …
strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm …
MOVPE growth of GaN on Si–Substrates and strain
A Dadgar, P Veit, F Schulze, J Bläsing, A Krtschil… - Thin Solid Films, 2007 - Elsevier
GaN on Si offers a promising technology for the low-cost production of wide-bandgap
devices. Here, we present approaches towards the growth of GaN on technologically most …
devices. Here, we present approaches towards the growth of GaN on technologically most …
Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer
The morphological and structural evolution is presented for GaN grown by metalorganic
chemical vapor deposition on 25nm thick or 150nm thick AlN initial layers on (0001) 4H and …
chemical vapor deposition on 25nm thick or 150nm thick AlN initial layers on (0001) 4H and …