The properties of quasi-two-dimensional semiconductor quantum dots are reviewed.
Experimental techniques for measuring the electronic shell structure and the effect of …

The control of electrons at the level of the elementary charge e was demonstrated
experimentally already in the 1980s. Ever since, the production of an electrical current ef, or …

The current-voltage characteristic of an ultrasmall tunnel junction is calculated for arbitrary
frequency dependence of the impedance presented to the junction by its electromagnetic …

A finite charging energy, e 2/2 C′, is required in order to place a single electron onto a
small isolated electrode lying between two tunnel junctions and having a total capacitance …

This paper presents room-temperature operation, for the first time, of single-electron
memory, in which one electron represents one bit of information. This is made possible by …

The circuit formed by a nanoscale tunnel junction in series with a capacitance and a voltage
source is the building block of most multi-junction circuits of single electronics. The state of …

The last few years have been marked by a rapidly rising interest in a new group of effects
taking place in systems with very small tunnel junctions at low temperatures. These effects …

The paper is devoted to calculation of the ''classical''(thermal and/or shot) intrinsic noise of
the single-electron transistor (SET) caused by the stochastic character of electron tunneling …

With the help of two single-electron tunneling transistors whose islands were positioned
about 100 nm apart, a low-frequency charge noise generated in the Al 2 O 3 substrate has …

Precise manipulation of individual charge carriers in nanoelectronic circuits underpins
practical applications of their most basic quantum property—the universality and invariance …