A gm/ID-Based Low-Power LNA for Ka-Band Applications
This article presents the design of a low-power low noise amplifier (LNA) implemented in 45
nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA …
nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA …
An ultra-wideband 0.1–6.1 GHz low noise amplifier in 180 nm CMOS technology
FS Bidabadi, SV Mir-Moghtadaei - Journal of Circuits, Systems and …, 2021 - World Scientific
In this paper, an Ultra-Wideband (UWB) low noise amplifier (LNA) with low power
consumption and high-power gain in 180 nm CMOS technology is presented. An innovative …
consumption and high-power gain in 180 nm CMOS technology is presented. An innovative …