Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive
the success of fabricating semiconductor devices in scale when a large low-cost native …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …

Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …

In general, inorganic non‐metallic materials exhibit brittleness, and achieving plasticity in
wide‐gap semiconductors or dielectrics poses an even greater challenge. Historically, silver …

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated
outstanding features in high-frequency and high-power applications. This paper reviews …