This paper reviews research on advanced bulk crystal growth of SiC. A brief review
highlights the benefits of the so called Modified Physical Vapor Transport Technique which …

We present a review of the different optical techniques that can be used to investigate the
presence of as-grown and/or process-induced stacking faults (SFs) in 4H–SiC epitaxial …

We present a review of recent photoluminescence, cathodoluminescence and micro‐
photoluminescence studies that have been made to investigate the electronic properties of …

The expansion of double Shockley stacking faults (DSFs) in an n-type 4H-SiC substrate with
a nitrogen concentration of 3.9× 10 19 cm− 3 was investigated using in situ synchrotron X …

Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed
by annealing at 550° C or 700° C with or without an additional compressive stress. The …

2 1 Bulk growth of SiC have a tremendous impact on high power electronic devices made
from this material. This is because the generation and expansion of stacking faults due to the …

Le carbure de silicium est un matériau envisagé pour le conditionnement du combustible
dans les réacteurs de quatrième génération. Ce travail a pour objectif d'étudier la capacité …

Stacking Faults (SFs) are important crystal defects in SiC [1, 2]. They can be electrically
active and, in this case, behave as deep quantum well traps for electrons [3–5]. This has …

Silicon carbide is envisaged as a cladding material for the nuclear fuel in the fourth
generation reactors. The aim of this work is to study the capacity to retain fission products …

[en] Silicon carbide is envisaged as a cladding material for the nuclear fuel in the fourth
generation reactors. The aim of this work is to study the capacity to retain fission products …