Near-Infrared Optical Gain of Colloidal Quantum Wells via Intraband Transitions

BT Diroll, RD Schaller - ACS Photonics, 2024 - ACS Publications
Tunable, unipolar, near-infrared intraband optical gain is demonstrated in semiconductor
colloidal quantum wells, expanding the form and optical range for potential infrared …

Suppression of non-radiative processes in semiconductor mid-infrared emitters and detectors

CR Pidgeon, CM Ciesla, BN Murdin - Progress in quantum electronics, 1997 - Elsevier
We review the methods that have been used for suppressing non-radiative processes in mid-
infrared (MIR) semiconductor lasers and detectors. Specifically we discuss the results of …

Intersubband electron-electron scattering in asymmetric quantum wells designed for far-infrared emission

P Kinsler, P Harrison, RW Kelsall - Physical Review B, 1998 - APS
Population inversion in inter-subband emitters and lasers depends critically on the lifetimes
of the nonradiative inter-subband transitions. We find that the often neglected Auger-type …

Terahertz absorption-saturation and emission from electron-doped germanium quantum wells

C Ciano, M Virgilio, L Bagolini, L Baldassarre… - Optics …, 2020 - opg.optica.org
We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells,
optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling …

Population inversion in optically pumped asymmetric quantum well terahertz lasers

P Harrison, RW Kelsall - Journal of applied physics, 1997 - pubs.aip.org
Intersubband carrier lifetimes and population ratios are calculated for three-and four-level
optically pumped terahertz laser structures. Laser operation is based on intersubband …

Electron population dynamics in optically pumped asymmetric coupled Ge/SiGe quantum wells: Experiment and models

C Ciano, M Virgilio, L Bagolini, L Baldassarre… - Photonics, 2019 - mdpi.com
n-type doped Ge quantum wells with SiGe barriers represent a promising heterostructure
system for the development of radiation emitters in the terahertz range such as electrically …

Simulation of optically pumped mid‐infrared intersubband semiconductor laser structures

J Wang, JP Leburton, Z Moussa, FH Julien… - Journal of applied …, 1996 - pubs.aip.org
Recently intersubband semiconductor lasers have been of great interest for mid-infrared
device applications. Stimulated emission in a unipolar intersubband laser has been …

Intersubband terahertz lasers using four-level asymmetric quantum wells

P Kinsler, P Harrison, RW Kelsall - Journal of Applied Physics, 1999 - pubs.aip.org
There are numerous possible applications in both imaging and wireless communications for
a compact solid-state source of terahertz radiation. The use of asymmetric or stepped …

Design and performance optimization of optically-pumped mid-infrared intersubband semiconductor lasers

J Wang, JP Leburton, FH Julien… - IEEE Photonics …, 1996 - ieeexplore.ieee.org
We show that self-consistent simulations of asymmetric coupled double-quantum wells
(ACQW) can be used efficiently to increase significantly the optical performances of optically …

Experimental and theoretical investigation of interband and intersubband transitions in type-II InAs/AlSb superlattices

I Prevot, B Vinter, FH Julien, F Fossard, X Marcadet - Physical Review B, 2001 - APS
Both theoretical and experimental results on interband and photoinduced intersubband
absorption in undoped type-II InAs/AlSb heterostructures are reported. The observation of …