Surface reconstructions during growth of GaAs1− xBix alloys by molecular beam epitaxy
An in-situ electron diffraction study of surface reconstructions on (001) oriented GaAs1− xBix
films has been carried out during growth by molecular beam epitaxy on GaAs substrates in …
films has been carried out during growth by molecular beam epitaxy on GaAs substrates in …
Links between bismuth incorporation and surface reconstruction during GaAsBi growth probed by in situ measurements
C Cornille, A Arnoult, Q Gravelier… - Journal of Applied …, 2019 - pubs.aip.org
Bismuth incorporation and surface reconstruction have been studied simultaneously during
GaAsBi growth by molecular beam epitaxy by means of in situ wafer curvature monitoring …
GaAsBi growth by molecular beam epitaxy by means of in situ wafer curvature monitoring …
Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
H Makhloufi, P Boonpeng, S Mazzucato… - Nanoscale Research …, 2014 - Springer
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the
properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High …
properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High …
Bismuth-stabilized and reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
MPJ Punkkinen, P Laukkanen, HP Komsa… - Physical Review B …, 2008 - APS
Bismuth adsorbate-stabilized (2× 1) and (2× 4) reconstructions of the GaAs (100) surfaces
have been studied by first-principles calculations, valence-band and core-level …
have been studied by first-principles calculations, valence-band and core-level …
Surface reconstruction stability and configurational disorder on Bi-terminated GaAs (001)
We developed a rigorous and exhaustive method for calculating the 0 K surface phase
diagram of Bi/GaAs (001) by using density functional theory in conjunction with the cluster …
diagram of Bi/GaAs (001) by using density functional theory in conjunction with the cluster …
In situ analysis of Bi terminated GaAs (0 0 1) and Ga (As, Bi) surfaces during growth by MOVPE
O Maßmeyer, T Hepp, R Günkel, J Glowatzki… - Applied Surface …, 2020 - Elsevier
The influence of trimethylbismuth (TMBi) on the GaAs (0 0 1) surface reconstruction is
studied in situ by reflection anisotropy spectroscopy (RAS) in a metal organic vapor phase …
studied in situ by reflection anisotropy spectroscopy (RAS) in a metal organic vapor phase …
Does Bi form clusters in GaAs1− xBi x alloys?
MPJ Punkkinen, P Laukkanen, M Kuzmin… - Semiconductor …, 2014 - iopscience.iop.org
GaAs 1− x Bi x alloys attract significant interest due to their potentiality for several
applications, including solar cells. Recent experiments link the crucial optical properties of …
applications, including solar cells. Recent experiments link the crucial optical properties of …
[HTML][HTML] Influence of surface reconstruction on dopant incorporation and transport properties of GaAs (Bi) alloys
We report on the influence of surface reconstruction on silicon dopant incorporation and
transport properties during molecular-beam epitaxy of GaAs (Bi) alloys. GaAs (Bi) growth …
transport properties during molecular-beam epitaxy of GaAs (Bi) alloys. GaAs (Bi) growth …
Surface studies by low-energy electron diffraction and reflection high-energy-electron diffraction
In this chapter, we present the basic concepts of the low-energy electron diffraction (LEED)
and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to …
and reflection high-energy electron diffraction (RHEED) experiments. The main goal is to …
Systematic approach for determination of equilibrium atomic surface structure
JC Thomas, NA Modine, JM Millunchick… - Physical Review B …, 2010 - APS
Despite the increasing importance of atomic-scale surface characterization, the state of the
art in automating the prediction of atomic surface structure lags behind recent advances in …
art in automating the prediction of atomic surface structure lags behind recent advances in …