[HTML][HTML] Diffusion of n-type dopants in germanium
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …
material for nanoelectronic applications. Germanium has advantageous materials …
Charged point defects in semiconductors
EG Seebauer, MC Kratzer - Materials Science and Engineering: R: Reports, 2006 - Elsevier
Native point defects control many aspects of semiconductor behavior. Such defects can be
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
electrically charged, both in the bulk and on the surface. This charging can affect numerous …
On-chip infrared photonics with Si-Ge-heterostructures: What is next?
The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …
[BOOK][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy
JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …
Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Light emission from direct band gap germanium containing split-interstitial defects
The lack of useful and cost-efficient group-IV direct band gap light emitters still presents the
main bottleneck for complementary metal-oxide semiconductor-compatible short-distance …
main bottleneck for complementary metal-oxide semiconductor-compatible short-distance …
Ultrabroadband and multiband infrared/terahertz photodetectors with high sensitivity
Broadband response is pursued in both infrared (IR) and terahertz (THz) detection
technologies, which find their applications in both terrestrial and astronomical realms …
technologies, which find their applications in both terrestrial and astronomical realms …
Laser level scheme of self-interstitials in epitaxial Ge dots encapsulated in Si
Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates
can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we …
can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we …
[BOOK][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Diffusion and defect reactions between donors, C, and vacancies in Ge. II. Atomistic calculations of related complexes
Electronic structure calculations are used to study the stability, concentration, and migration
of vacancy-donor (phosphorus, arsenic, and antimony) complexes in germanium, in the …
of vacancy-donor (phosphorus, arsenic, and antimony) complexes in germanium, in the …