Atomic interface regulation of rare-marth metal single atom catalysts for energy conversion

Z Zhan, Z Sun, Z Wei, Y Li, W Chen, S Li, S Pang - Nano Research, 2024 - Springer
Efficient photocatalysis and electrocatalysis in energy conversion have been important
strategies to alleviate energy crises and environmental issues. In recent years, with the rapid …

Flash lamp annealing

L Rebohle, S Prucnal, D Reichel - Springer Series in Materials Science …, 2019 - Springer
The idea to write a book about flash lamp annealing (FLA) was born when we collected
material for recent review papers [1–3]. It appeared that on the one hand sufficient …

Indirect excitation and luminescence activation of Tb doped indium tin oxide and its impact on the host's optical and electrical properties

P Llontop, CE Torres, M Piñeiro, L Conde… - Journal of Physics D …, 2022 - iopscience.iop.org
The effect of adding terbium to indium tin oxide (ITO) thin films on the electrical, optical and
light emission properties was investigated. The films were prepared by radio frequency dual …

Near-Infrared Electroluminescence Based on Nd-Doped Ga2O3 Nanolaminates Fabricated by Atomic Layer Deposition for Optoelectronic Applications

K Yuan, Z Yu, L Yang, Y Yang… - ACS Applied Nano …, 2022 - ACS Publications
Near-infrared electroluminescence (EL) peaking at 1067 nm is achieved from the devices
based on Ga2O3: Nd nanolaminates fabricated by atomic layer deposition on silicon. The …

Electroluminescent Yb2O3: Er and Yb2Si2O7: Er nanolaminate films fabricated by atomic layer deposition on silicon

Z Ouyang, Y Yang, J Sun - Optical Materials, 2018 - Elsevier
Atomic layer doped Yb 2 O 3: Er and Yb 2 Si 2 O 7: Er nanolaminate films are fabricated on
silicon by atomic layer deposition, and∼ 1530 nm electroluminescence (EL) is obtained …

Near-infrared electroluminescence from atomic layer doped Al2O3: Yb nanolaminate films on silicon

Z Ouyang, Y Yang, J Sun - Scripta Materialia, 2018 - Elsevier
Abstract Nanolaminate Al 2 O 3: Yb films are fabricated by atomic layer deposition on silicon,
from which intense 977 nm electroluminescence is obtained. By precise controlling the Yb …

Strong electroluminescence from SiO2-Tb2O3-Al2O3 mixed layers fabricated by atomic layer deposition

L Rebohle, M Braun, R Wutzler, B Liu, JM Sun… - Applied Physics …, 2014 - pubs.aip.org
We report on the bright green electroluminescence (EL) with power efficiencies up to 0.15%
of SiO 2-Tb 2 O 3-mixed layers fabricated by atomic layer deposition and partly co-doped …

The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

L Rebohle, Y Berencén, R Wutzler, M Braun… - Journal of Applied …, 2014 - pubs.aip.org
Rare earth doped metal-oxide-semiconductor (MOS) structures are of great interest for Si-
based light emission. However, several physical limitations make it difficult to achieve the …

Structural and emission properties of Tb3+-doped nitrogen-rich silicon oxynitride films

C Labbe, YT An, G Zatryb, X Portier… - …, 2017 - iopscience.iop.org
Terbium doped silicon oxynitride host matrix is suitable for various applications such as light
emitters compatible with CMOS technology or frequency converter systems for photovoltaic …

Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon

Y Yang, N Li, J Sun - Optics Express, 2018 - opg.optica.org
Intense electroluminescence (EL) from Tb^ 3+ ions in the Al_2O_3/Tb_2O_3 nanolaminate
films is achieved in a metal-oxide-semiconductor structure fabricated on silicon, utilizing …