Emerging iontronic neural devices for neuromorphic sensory computing
Living organisms have a very mysterious and powerful sensory computing system based on
ion activity. Interestingly, studies on iontronic devices in the past few years have proposed a …
ion activity. Interestingly, studies on iontronic devices in the past few years have proposed a …
Atomic Layer Deposition Films for Resistive Random‐Access Memories
Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode
Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
(RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent …
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
In this work, electronic synaptic plasticity and analog bipolar switching behavior by using a
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Chemical structure of conductive filaments in tantalum oxide memristive devices and its implications for the formation mechanism
T Heisig, K Lange, A Gutsche, KT Goß… - Advanced electronic …, 2022 - Wiley Online Library
Resistive switching in metal oxides is believed to be caused by a temperature and electric
field driven redistribution of oxygen vacancies within a nanometer sized conductive filament …
field driven redistribution of oxygen vacancies within a nanometer sized conductive filament …
Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications
An oxidizable metal diffusion barrier inserted between the active metal electrode and the
switching layer decreases the electroforming voltage and enhances the switching stability …
switching layer decreases the electroforming voltage and enhances the switching stability …
Adaptive latent inhibition in associatively responsive optoelectronic synapse
The association of stimuli is an important attribute in the neural basis of learning and
memory. While the acquisition and extinction of association through conditioning are well …
memory. While the acquisition and extinction of association through conditioning are well …
Resistive switching, endurance and retention properties of ZnO/HfO2 bilayer heterostructure memory device
This work reports the fabrication of resistive memory device with a bilayer ZnO/HfO 2
structure. Highly stable and uniform bipolar resistance switching (RS) characteristics were …
structure. Highly stable and uniform bipolar resistance switching (RS) characteristics were …
Structural and electronic properties of Ta2O5 with one formula unit
Y Tong, H Tang, Y Yang - Computational Materials Science, 2023 - Elsevier
Based on particle swarm optimization (PSO) algorithm and density functional theory (DFT)
calculations, we identify a stable triclinic crystal structure of Ta 2 O 5 (named as γ 1-Ta 2 O 5) …
calculations, we identify a stable triclinic crystal structure of Ta 2 O 5 (named as γ 1-Ta 2 O 5) …
Uniform resistive switching and highly stable synaptic characteristics of HfOx sandwiched TaOx-based memristor for neuromorphic system
Emerging nanoscale devices, including memristors, have been extensively studied to
implement biological synaptic functions such as learning and plasticity, which are the …
implement biological synaptic functions such as learning and plasticity, which are the …