The recent advances in epitaxial SiC films' growth on Si are overviewed. The basic classical
methods currently used for SiC films' growth are discussed and their advantages and …

A review of recent advances in the field of epitaxial growth of SiC films on Si by means of a
new method of epitaxial substitution of film atoms for substrate atoms has been presented …

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(65) Prior Publication Data(Continued) US 2011 FOO49568 A1 Mar. 3, 2011 OTHER
PUBLICATIONS Related US Application Data 68 Applied Physics Letters 7, pp. 774-779 …

Different techniques for epitaxial growth of gallium nitride and main properties of GaN layers
as well as devices made on the base of GaN-structures are described in the review. A new …

Semiconductor structures include a trench formed proximate (56) References Cited a
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US9153645B2 - Lattice-mismatched semiconductor structures with reduced dislocation
defect densities and related methods for device fabrication - Google Patents US9153645B2 …

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