Modeling ISFET microsensor and ISFET-based microsystems: a review
Silicon technology is one of the most promising for sensor development. Moreover,
electronic simulation tools, originally introduced to design electronic circuits, can be adapted …
electronic simulation tools, originally introduced to design electronic circuits, can be adapted …
VHDL-AMS and Verilog-AMS as alternative hardware description languages for efficient modeling of multidiscipline systems
F Pêcheux, C Lallement… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
This paper focuses on commonalities and differences between the two mixed-signal
hardware description languages, VHDL-AMS and Verilog-AMS, in the case of modeling …
hardware description languages, VHDL-AMS and Verilog-AMS, in the case of modeling …
A low-power CMOS super-regenerative receiver at 1 GHz
A Vouilloz, M Declercq… - IEEE journal of solid-state …, 2001 - ieeexplore.ieee.org
A low-power and low-voltage super-regenerative receiver operating at 1 GHz and
implemented in a 0.35-/spl mu/m CMOS process is described. The receiver includes a low …
implemented in a 0.35-/spl mu/m CMOS process is described. The receiver includes a low …
A CAD methodology for optimizing transistor current and sizing in analog CMOS design
DM Binkley, CE Hopper, SD Tucker… - … on Computer-Aided …, 2003 - ieeexplore.ieee.org
A computer-aided design (CAD) methodology for optimizing MOS transistor current and
sizing is presented where drain current ID, inversion level (represented by inversion …
sizing is presented where drain current ID, inversion level (represented by inversion …
Multi-scale, Multi-physics Modeling and Simulation of Single Event Effects in Digital Electronics: from Particles to Systems
JL Autran, D Munteanu - IEEE Transactions on Nuclear Science, 2023 - ieeexplore.ieee.org
This article aims to provide a survey of modeling and simulation of single-event effects
(SEEs) in digital electronics at device, circuit, and system levels. It primarily focuses on the …
(SEEs) in digital electronics at device, circuit, and system levels. It primarily focuses on the …
A Sub- Voltage Reference Operating at 150 mV
We propose a subthreshold CMOS voltage reference operating with a minimum supply
voltage of only 150 mV, which is three times lower than the minimum value presently …
voltage of only 150 mV, which is three times lower than the minimum value presently …
Ultra low-power radio design for wireless sensor networks
Power consumption and size are the most important challenges faced when designing
radios for distributed wireless sensor networks (WSN). Reducing power consumption …
radios for distributed wireless sensor networks (WSN). Reducing power consumption …
Compact terahertz SPICE/ADS model
X Liu, T Ytterdal, VY Kachorovskii… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
We describe a compact terahertz (THz) SPICE/advanced design system (ADS) model based
on the extended Enz-Krummenacher-Vittoz (EKV) MOSFET model with channel …
on the extended Enz-Krummenacher-Vittoz (EKV) MOSFET model with channel …
[書籍][B] Circuit simulation with SPICE OPUS: theory and practice
This book is the first complete guide to analog circuit design using the circuit simulator
software package SPICE OPUS. Developed by the authors and used by academics and …
software package SPICE OPUS. Developed by the authors and used by academics and …
A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation
This paper presents a new set of exact analytical expressions for the small signal analysis of
the non-quasi-static operation of the MOS transistor. This model is derived from a standard …
the non-quasi-static operation of the MOS transistor. This model is derived from a standard …