Progress and Perspectives on Aurivillius-Type Layered Ferroelectric Oxides in Binary Bi4Ti3O12-BiFeO3 System for Multifunctional Applications
S Sun, X Yin - Crystals, 2020 - mdpi.com
Driven by potentially photo-electro-magnetic functionality, Bi-containing Aurivillius-type
oxides of binary Bi4Ti3O12-BiFeO3 system with a general formula of Bi n+ 1Fe n− 3Ti3O3 …
oxides of binary Bi4Ti3O12-BiFeO3 system with a general formula of Bi n+ 1Fe n− 3Ti3O3 …
Direct visualization of magnetic‐field‐induced magnetoelectric switching in multiferroic aurivillius phase thin films
Multiferroic materials displaying coupled ferroelectric and ferromagnetic order parameters
could provide a means for data storage whereby bits could be written electrically and read …
could provide a means for data storage whereby bits could be written electrically and read …
Direct atomic scale determination of magnetic ion partition in a room temperature multiferroic material
The five-layer Aurivillius phase Bi6TixFeyMnzO18 system is a rare example of a single-
phase room temperature multiferroic material. To optimise its properties and exploit it for …
phase room temperature multiferroic material. To optimise its properties and exploit it for …
Ferroelectric Behavior in Exfoliated 2D Aurivillius Oxide Flakes of Sub‐Unit Cell Thickness
Ferroelectricity in ultrasonically exfoliated flakes of the layered Aurivillius oxide Bi5Ti3Fe0.
5Co0. 5O15 with a range of thicknesses is studied. These flakes have relatively large areas …
5Co0. 5O15 with a range of thicknesses is studied. These flakes have relatively large areas …
Charged domain wall and polar vortex topologies in a room-temperature magnetoelectric multiferroic thin film
Multiferroic topologies are an emerging solution for future low-power magnetic
nanoelectronics due to their combined tuneable functionality and mobility. Here, we show …
nanoelectronics due to their combined tuneable functionality and mobility. Here, we show …
Structure Evolution and Multiferroic Properties in Cobalt Doped Bi4NdTi3Fe1-xCoxO15-Bi3NdTi2Fe1-xCoxO12-δ Intergrowth Aurivillius …
Here, we report the structure evolution, magnetic and ferroelectric properties in Co-doped 4-
and 3-layered intergrowth Aurivillius compounds Bi4NdTi3Fe1-x Co x O15-Bi3NdTi2Fe1-x …
and 3-layered intergrowth Aurivillius compounds Bi4NdTi3Fe1-x Co x O15-Bi3NdTi2Fe1-x …
Persistence of ferroelectricity close to unit-cell thickness in structurally disordered Aurivillius phases
L Keeney, Z Saghi, M O'Sullivan, J Alaria… - Chemistry of …, 2020 - ACS Publications
Multiferroics intertwine ferroelectric and ferromagnetic properties, allowing for novel ways of
manipulating data and storing information. To optimize the unique Bi6Ti x Fe y Mn z O18 …
manipulating data and storing information. To optimize the unique Bi6Ti x Fe y Mn z O18 …
Exploring ferroelectric and magnetic properties of Tb-substituted m= 5 layered Aurivillius phase thin films
Here, we report the effect of A-site substitution of Tb at the expense of Bi on the ferroelectric
and magnetic properties in m= 5 layered 2-D Aurivillius Bi 6 Ti 3 Fe 2 O 18 thin films. The …
and magnetic properties in m= 5 layered 2-D Aurivillius Bi 6 Ti 3 Fe 2 O 18 thin films. The …
Strong magnetoelectric coupling of Aurivillius phase multiferroic composite films with similar layered perovskite structure
Z Tang, B Yang, J Chen, Q Lu, S Zhao - Journal of Alloys and Compounds, 2019 - Elsevier
Abstract Aurivillius phase Bi 5 Ti 3 FeO 15/Na 0.5 Bi 4.5 Ti 4 O 15 multiferroic composite
films were synthesized using a sol-gel technique. Multiferroic properties and …
films were synthesized using a sol-gel technique. Multiferroic properties and …
Double perovskite Bi2FeMnO6/TiO2 thin film heterostructure device for neuromorphic computing
DL Li, WM Zhong, XG Tang, Q He, YP Jiang… - Applied Physics …, 2024 - pubs.aip.org
Multiferroic materials have important research significance in the fields of magnetic random-
access memory, ferroelectric random-access memory, resistive random-access memory …
access memory, ferroelectric random-access memory, resistive random-access memory …