Recent advances in synaptic nonvolatile memory devices and compensating architectural and algorithmic methods toward fully integrated neuromorphic chips
Nonvolatile memory (NVM)‐based neuromorphic computing has been attracting
considerable attention from academia and the industry. Although it is not completely …
considerable attention from academia and the industry. Although it is not completely …
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic …
Memristive devices have been explored as electronic synaptic devices to mimic biological
synapses for develo** hardware-based neuromorphic computing systems. However …
synapses for develo** hardware-based neuromorphic computing systems. However …
Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power …
In this letter, a bipolar resistive-switching random-access memory (RRAM) in Ni/Si 3 N 4/SiO
2/p+-Si structure and its fabrication process are demonstrated. The proposed device with …
2/p+-Si structure and its fabrication process are demonstrated. The proposed device with …
3-D stacked synapse array based on charge-trap flash memory for implementation of deep neural networks
YJ Park, HT Kwon, B Kim, WJ Lee… - … on Electron Devices, 2018 - ieeexplore.ieee.org
This paper proposes a synaptic device based on charge-trap flash memory that has good
CMOS compatibility and superior reliability characteristics compared with other synaptic …
CMOS compatibility and superior reliability characteristics compared with other synaptic …
Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
In this letter, we extensively investigate the nonlinear resistive switching characteristics of Si
3 N 4-based resistive random access memory (RRAM) devices that contain an Al 2 O 3 …
3 N 4-based resistive random access memory (RRAM) devices that contain an Al 2 O 3 …
Natural local self-boosting effect in 3D NAND flash memory
This letter examined the natural local self-boosting effect of an inhibited channel in three-
dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash …
dimensional (3D) NAND flash memory. The inhibited channel in the 3D NAND flash …
Down-coupling phenomenon of floating channel in 3D NAND flash memory
In this letter, we have investigated the down-coupling phenomenon (DCP) of inhibited
channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash …
channel potential in 3D NAND flash memory. The inhibited channel in the 3D NAND flash …
3-D synapse array architecture based on charge-trap flash memory for neuromorphic application
In order to address a fundamental bottleneck of conventional digital computers, there is
recently a tremendous upsurge of investigations on hardware-based neuromorphic systems …
recently a tremendous upsurge of investigations on hardware-based neuromorphic systems …
Effect of top electrode material on resistive switching properties of WN based thin films for non volatile memory application
The influence of top electrode (TE) material on resistive switching properties of DC
magnetron sputtered tungsten nitride (WN) thin film with TE (Ti, Al and Cu)/WN/Pt stack …
magnetron sputtered tungsten nitride (WN) thin film with TE (Ti, Al and Cu)/WN/Pt stack …
3-D floating-gate synapse array with spike-time-dependent plasticity
This paper proposes a 3-D floating-gate (FG) synapse array for neuromorphic applications.
The designed device has certain advantages over previous planar FG synapse devices: a …
The designed device has certain advantages over previous planar FG synapse devices: a …