Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …

Coatings are used for a wide range of applications, from anti-fogging coatings for glass
through to corrosion control in the aerospace and automotive industries. Nanocoatings and …

GaN nanopillar and nanostripe arrays with embedded In Ga N∕ Ga N multi-quantum wells
(MQWs) were fabricated by holographic lithography and subsequent reactive ion etching …

In this study, we have investigated the optical properties of nanoporous GaN films on
sapphire (0001) prepared by UV-assisted electrochemical and electroless etching. Using …

In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced
gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma …

Morphology is one of the basic characteristics of porous layers. For electrochemically grown
pores, morphology is strongly dependent on the starting phase of pore growth, the so-called …

This paper presents the structural and optical studies of porous GaN prepared by ultra-violet
(UV) assisted electrochemical etching under various conditions. The characteristics of the …

Nanoporous GaN films are prepared by ultraviolet assisted electrochemical etching using
HF solution as an electrolyte. To assess the optical quality and morphology of these …

We have investigated the optical properties of dislocation-free vertical GaN nanorods grown
on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The …