A spin-transfer torque switched magnetic tunnel junction (MTJ) is a memory element in
modern magnetic random access memory (MRAM), a CMOS-integrated technology that is …

We theoretically investigate the threshold current for thermally activated switching of a
perpendicular magnet by spin-orbit spin torque. Based on the Fokker-Planck equation, we …

Spin-transfer torques can switch magnetizations via a current passing through a magnetic
tunnel junction, an effect that is being pursued as the switching mechanism in spin-transfer …

When magnets are fashioned into nanoscale elements, they exhibit a wide variety of
phenomena replete with rich physics and the lure of tantalizing applications. In this topical …

Modulation of the energy landscape by external perturbations governs various thermally-
activated phenomena, described by the Arrhenius law. Thermal fluctuation of nanoscale …

We present a systematic experimental study of the spin-torque-induced magnetic switching
statistics at room temperature, using all-perpendicularly magnetized spin-valves as a model …

We investigate the physical mechanism governing the sigmoid-like time-averaged response
of stochastic magnetic tunnel junctions (s-MTJ), which is a promising building block for …

Relativistic heavy-ion collisions give rise to the formation of both deconfined quantum
chromodynamics (QCD) matter and a strong magnetic field. The spin of heavy quarks is …

We study magnetization switching in the dynamical regime for in-plane magnetized systems,
useful for field-free spin-orbit torque switching devices. We derive a formula for the switching …

A spin-transfer torque (STT) switched magnetic tunnel junction (MTJ) enables modern
magnetic random access memory (MRAM). Optimization of perpendicularly magnetized MTJ …