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Reversible photodarkening of amorphous arsenic chalcogens
G Pfeiffer, MA Paesler, SC Agarwal - Journal of non-crystalline solids, 1991 - Elsevier
Illumination with bandgap light induces changes in physical properties of many
chalcogenide semiconductors. Fundamental aspects of strike reversible photodarkening …
chalcogenide semiconductors. Fundamental aspects of strike reversible photodarkening …
Amorphous chalcogenides: advances and applications
RP Wang - 2014 - books.google.com
This book provides a comprehensive overview of the chalcogenide glass science and
various applications based on the glasses. It starts with a review on the glass-forming ability …
various applications based on the glasses. It starts with a review on the glass-forming ability …
[KNJIGA][B] EXAFS: basic principles and data analysis
BK Teo - 2012 - books.google.com
The phenomenon of Extended X-Ray Absorption Fine Structure (EXAFS) has been known
for some time and was first treated theoretically by Kronig in the 1930s. Recent …
for some time and was first treated theoretically by Kronig in the 1930s. Recent …
Topology of covalent non-crystalline solids II: Medium-range order in chalcogenide alloys and A Si (Ge)
JC Phillips - Journal of Non-Crystalline Solids, 1981 - Elsevier
Journal of Non-Crystalline Solids 43 (1981) 37-77 © North-Holland Publishing Company
TOPOLOGY OF COVALENT NON-CRYSTALLINE SOLID Page 1 Journal of Non-Crystalline …
TOPOLOGY OF COVALENT NON-CRYSTALLINE SOLID Page 1 Journal of Non-Crystalline …
Photo-induced structural and physico-chemical changes in amorphous chalcogenide semiconductors
AE Owen, AP Firth, PJS Ewen - Philosophical Magazine B, 1985 - Taylor & Francis
The various photo-induced phenomena that occur in chalcogenide glasses are classified
and described, with particular emphasis on the photo-dissolution effect. The detailed …
and described, with particular emphasis on the photo-dissolution effect. The detailed …
Stochastic random network model in Ge and Si chalcogenide glasses
S Sugai - Physical Review B, 1987 - APS
A stochastic random network model is proposed for the structure of Ge x S 1− x, Ge x Se 1−
x, Si x S 1− x, and Si x Se 1− x (x≤ 0.33) glasses. This model is constructed to explain the …
x, Si x S 1− x, and Si x Se 1− x (x≤ 0.33) glasses. This model is constructed to explain the …
Defects in a Disordered World: The Structure of Glassy
I Petri, PS Salmon, HE Fischer - Physical review letters, 2000 - APS
The full set of partial structure factors for the prototypical network glass GeSe 2 was
measured using the method of isotopic substitution in neutron diffraction. The basic building …
measured using the method of isotopic substitution in neutron diffraction. The basic building …
Extended x-ray absorption fine structure spectroscopy
TM Hayes, JB Boyce - Solid State Physics, 1983 - Elsevier
Publisher Summary This chapter describes extended x-ray absorption fine structure
spectroscopy (EXAFS) spectroscopy with a breadth sufficient to communicate to the non …
spectroscopy (EXAFS) spectroscopy with a breadth sufficient to communicate to the non …
Thermal transport and grain boundary conductance in ultrananocrystalline diamond thin films
MA Angadi, T Watanabe, A Bodapati, X **ao… - Journal of Applied …, 2006 - pubs.aip.org
Although diamond has the highest known room temperature thermal conductivity, k∼ 2200
W∕ m K, highly sp 3 amorphous carbon films have k< 15 W∕ m K. We carry out an …
W∕ m K, highly sp 3 amorphous carbon films have k< 15 W∕ m K. We carry out an …
Interference-enhanced Raman scattering of very thin titanium and titanium oxide films
RJ Nemanich, CC Tsai, GAN Connell - Physical Review Letters, 1980 - APS
The Raman spectra of very thin evaporated films (∼ 6 nm thick) of metallic titanium and
oxidized titanium are obtained with a new technique called interference-enhanced Raman …
oxidized titanium are obtained with a new technique called interference-enhanced Raman …