Silicon–germanium nanowires: chemistry and physics in play, from basic principles to advanced applications
The trend predicted by Moore's law sets forth strict requirements on the electronic properties
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …
of materials that cannot always be satisfied by conventional semiconductors. Thus, the last …
Oxidation-boosted charge trap** in ultra-sensitive van der Waals materials for artificial synaptic features
Exploitation of the oxidation behaviour in an environmentally sensitive semiconductor is
significant to modulate its electronic properties and develop unique applications. Here, we …
significant to modulate its electronic properties and develop unique applications. Here, we …
High mobilities in layered InSe transistors with indium‐encapsulation‐induced surface charge do**
Tunability and stability in the electrical properties of 2D semiconductors pave the way for
their practical applications in logic devices. A robust layered indium selenide (InSe) field …
their practical applications in logic devices. A robust layered indium selenide (InSe) field …
Noise spectroscopy of nanowire structures: fundamental limits and application aspects
S Vitusevich, I Zadorozhnyi - Semiconductor Science and …, 2017 - iopscience.iop.org
Nanowires (NWs) have recently emerged as a new class of materials demonstrating unique
properties which may completely differ from their bulk counterparts. The main aim of this …
properties which may completely differ from their bulk counterparts. The main aim of this …
Low-Frequency Noise Related to the Scattering Effect in p-Type Copper (I) Oxide Thin-Film Transistors
In this study, we investigate the origins of low-frequency noise (LFN) and 1/f noise in Cu2O
thin-film transistors (TFTs). The static direct current (DC) I–V characterization demonstrates …
thin-film transistors (TFTs). The static direct current (DC) I–V characterization demonstrates …
Low-frequency noise in junctionless multigate transistors
Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be
well understood with the carrier number fluctuations whereas the conduction is mainly …
well understood with the carrier number fluctuations whereas the conduction is mainly …
Low-frequency noise behavior of tunneling field effect transistors
We report on the low-frequency noise (LFN) properties of tunneling field effect transistors
(TFETs) fabricated on silicon-on-insulator substrate. Unlike conventional large FETs, where …
(TFETs) fabricated on silicon-on-insulator substrate. Unlike conventional large FETs, where …
Intermittent O2 Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors
B He, G He, Q Hu, W Wang, Y Li… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
In this work, intermittent O 2 plasma treatment (IOPT) is demonstrated to optimize the
electrical performance of In 2 O 3-based thin-film transistors (TFTs) based on …
electrical performance of In 2 O 3-based thin-film transistors (TFTs) based on …
[HTML][HTML] Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors
In this work, Al 2 O 3-passivated, monolithic, and crystalline Al–Ge–Al heterostructure
nanowire field effect transistors (FETs) with Ge channel lengths ranging from 18 to 826 nm …
nanowire field effect transistors (FETs) with Ge channel lengths ranging from 18 to 826 nm …
Controlled growth of SiGe nanowires by addition of HCl in the gas phase
Growth of Si, Ge, and, thus, SiGe nanowires (NWs) by catalyzed chemical vapor deposition
proceeds at different process conditions, preventing easy realization of axial multijunctions …
proceeds at different process conditions, preventing easy realization of axial multijunctions …