Wake‐Up Effect in HfO2‐Based Ferroelectric Films
HfO2‐based ferroelectric materials are promising candidates for next‐generation nonvolatile
memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been …
memories. Since the first report on Si‐doped HfO2 ferroelectric thin film in 2011, it has been …
Review on the microstructure of ferroelectric hafnium oxides
Ferroelectric hafnium oxide is of major interest for a multitude of applications in
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide
Ferroelectric hafnium oxide (HfO2) is considered a very prospective material for applications
in integrated devices due to its considerably large spontaneous polarization and superior …
in integrated devices due to its considerably large spontaneous polarization and superior …
Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2
Doped HfO2 thin films, which exhibit robust ferroelectricity even with aggressive thickness
scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric …
scaling, could potentially enable ultralow-power logic and memory devices. The ferroelectric …
Time‐Dependent Imprint in Hf0.5Zr0.5O2 Ferroelectric Thin Films
K Takada, S Takarae, K Shimamoto… - Advanced Electronic …, 2021 - Wiley Online Library
The discovery of the HfO2‐based ferroelectric films has opened new opportunities for using
this silicon‐compatible ferroelectric material to realize low‐power logic circuits and high …
this silicon‐compatible ferroelectric material to realize low‐power logic circuits and high …
(001)-Oriented Sr:HfO2 Ferroelectric Films Deposited by a Flexible Chemical Solution Method
Remnant polarization values of ferroelectric HfO2-based films depend on proper control of
the polar orthorhombic phase crystallization and the orientation of the polar domains. Most …
the polar orthorhombic phase crystallization and the orientation of the polar domains. Most …
Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period
The stability of remanent polarization (Pr) during multiple operations is critical for memory
applications, as the degradation of Pr leads to misreading of stored information. In this letter …
applications, as the degradation of Pr leads to misreading of stored information. In this letter …
[PDF][PDF] Material development of doped hafnium oxide for non-volatile ferroelectric memory application
M Lederer - 2022 - researchgate.net
The discovery of ferroelectricity in hafnium oxide spurred a growing research eld due to
hafnium oxides compatibility with processes in microelectronics as well as its unique …
hafnium oxides compatibility with processes in microelectronics as well as its unique …
Investigation of the wake-up process and time-dependent imprint of Hf0. 5Zr0. 5O2 film through the direct piezoelectric response
K Takada, M Murase, S Migita, Y Morita, H Ota… - Applied Physics …, 2021 - pubs.aip.org
Ferroelectric HfO 2-based thin films, which have been attracting a great deal attention
because of their potential use in various applications, are known for their unique properties …
because of their potential use in various applications, are known for their unique properties …
Ferroelectricity of Hf0. 5Zr0. 5O2 thin films grown by atomic layer deposition on epitaxial TiN bottom electrodes
In this study, the effects of the epitaxial TiN bottom electrode on the crystallinity and
ferroelectricity of Hf 0.5 Zr 0.5 O 2 (HZO) thin films were investigated. HZO thin films were …
ferroelectricity of Hf 0.5 Zr 0.5 O 2 (HZO) thin films were investigated. HZO thin films were …