Neuromorphic computing uses brain-inspired principles to design circuits that can perform
computational tasks with superior power efficiency to conventional computers. Approaches …

From the discovery of giant magnetoresistance (GMR) to tunnel magnetoresistance (TMR),
their subsequent application in large capacity hard disk drives (HDDs) greatly speeded up …

Antiferromagnetic spintronics have attracted wide attention due to its great potential in
constructing ultradense and ultrafast antiferromagnetic memory that suits modern high …

Neurons in the brain behave as nonlinear oscillators, which develop rhythmic activity and
interact to process information. Taking inspiration from this behaviour to realize high-density …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent
memory technology because of its long data retention and robust endurance. Initial MRAM …

In this paper, a review of the developments in MRAM technology over the past 20 years is
presented. The various MRAM generations are described with a particular focus on spin …

This article reviews static and dynamic interfacial effects in magnetism, focusing on
interfacially driven magnetic effects and phenomena associated with spin-orbit coupling and …

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access
memories. Successful implementation depends on a simultaneous achievement of low …

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching
times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high …