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Stable Zn Metal Anodes with Limited Zn-Do** in MgF2 Interphase for Fast and Uniformly Ionic Flux
The practical applications of aqueous Zn metal batteries are currently restricted by the
inherent drawbacks of Zn such as the hydrogen evolution reaction, sluggish kinetics, and …
inherent drawbacks of Zn such as the hydrogen evolution reaction, sluggish kinetics, and …
Influence of substrate bias voltage on structure, mechanical and corrosion properties of ZrO2 thin films deposited by reactive magnetron sputter deposition
Zirconium oxide (ZrO 2) thin films were grown onto 316L stainless steel by radio frequency
magnetron sputtering (RFMS), at different substrate DC bias voltages (from 0 to− 100 V). The …
magnetron sputtering (RFMS), at different substrate DC bias voltages (from 0 to− 100 V). The …
Adhesion and mechanical properties of Ti films deposited by DC magnetron sputtering
Titanium films were deposited on AISI 316L stainless steel substrates by DC unbalanced
magnetron sputtering, the substrate temperature and deposition time were changed. In this …
magnetron sputtering, the substrate temperature and deposition time were changed. In this …
Ultra-strength of Ti films via (002) texture optimization and nanocolumnar strengthening
Y Pan, B Wang, D Xue, B Deng, C Tan… - Materials Science and …, 2024 - Elsevier
This paper focused on the correlation between the (002) texture, columnar grain size and
mechanical properties of Ti films prepared by magnetron sputtering. The (002) texture and …
mechanical properties of Ti films prepared by magnetron sputtering. The (002) texture and …
[HTML][HTML] Improvement of the Wear and Corrosion Resistance of CrSiN Films on ZE52 Magnesium Alloy Through the DC Magnetron Sputtering Process
HY Wu, LJ Yang, HJ Chen, SH Chang, HC Lin - Materials, 2025 - mdpi.com
The utilization of magnesium alloys as lightweight structural materials is becoming
increasingly prevalent, particularly within the fields of electronics, automotive engineering …
increasingly prevalent, particularly within the fields of electronics, automotive engineering …
Room‐Temperature Micropillar Growth of Lithium–Titanate–Carbon Composite Structures by Self‐Biased Direct Current Magnetron Sputtering for Lithium Ion …
Here, an unidentified type of micropillar growth is described at room temperature during
conventional direct‐current magnetron sputtering (DC‐MS) deposition from a Li4Ti5O12+ …
conventional direct‐current magnetron sputtering (DC‐MS) deposition from a Li4Ti5O12+ …
Changes of the Crystalline Texture and Resistivity of Ti Films under Ion Bombardment
RV Selyukov, II Amirov, MO Izyumov, VV Naumov… - Technical Physics, 2024 - Springer
Crystalline texture, microstracture and resistivity of ion irradiated 12–41 nm Ti films are
investigated. Ion bombardment was carried out in Ar plasma by applying negative bias 20 …
investigated. Ion bombardment was carried out in Ar plasma by applying negative bias 20 …
Bias voltage dependent structure and morphology evolution of magnetron sputtered YSZ thin film: a basic insight
YSZ thin films (YSZTFs) with controlled structure and morphology are desirable for low
temperature solid oxide fuel cells (SOFCs). We report for the first time the bias voltage (40 V …
temperature solid oxide fuel cells (SOFCs). We report for the first time the bias voltage (40 V …
Resputtering effect on nanocrystalline Ni-Ti alloy films
We report on the effect of resputtering on the properties of nanocrystalline Ni-Ti alloy thin
films deposited using co-sputtering of Ni and Ti targets. In order to facilitate the formation of …
films deposited using co-sputtering of Ni and Ti targets. In order to facilitate the formation of …
[PDF][PDF] Formation of (100) texture in thin ti films under low-energy ion bombardment
RV Selyukov, MO Izyumov, VV Naumov… - Technical Physics …, 2022 - researchgate.net
Accepted August 30, 2021 10− 40 nm Ti films with mixed crystalline texture (100)+(001) are
exposed to ion bombardment in inductively coupled Ar plasma by applying the bias− 30 V to …
exposed to ion bombardment in inductively coupled Ar plasma by applying the bias− 30 V to …