A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
[HTML][HTML] MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
We report on the growth of β-Ga 2 O 3 thin films using trimethylgallium (TMGa) as a source
for gallium and pure O 2 for oxidation. The growth rate of the films was found to linearly …
for gallium and pure O 2 for oxidation. The growth rate of the films was found to linearly …
Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review
Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …
development of solar blind photodetectors and power electronic devices which are …
[HTML][HTML] Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
Y Oshima, E Ahmadi - Applied Physics Letters, 2022 - pubs.aip.org
Ultra-wide-bandgap (UWBG) semiconductors, such as Ga 2 O 3 and diamond, have been
attracting increasing attention owing to their potential to realize high-performance power …
attracting increasing attention owing to their potential to realize high-performance power …
[HTML][HTML] Ge do** of β-Ga2O3 by MOCVD
F Alema, G Seryogin, A Osinsky, A Osinsky - APL Materials, 2021 - pubs.aip.org
We report on the Ge do** of Ga 2 O 3 using metalorganic chemical vapor deposition
(MOCVD) epitaxy. The effects of the GeH 4/N 2 flow rate, substrate temperature, VI/III ratio …
(MOCVD) epitaxy. The effects of the GeH 4/N 2 flow rate, substrate temperature, VI/III ratio …
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
β‐Gallium Oxide Devices: Progress and Outlook
M Higashiwaki - physica status solidi (RRL)–Rapid Research …, 2021 - Wiley Online Library
Beta‐gallium oxide (β-Ga 2 O 3) has a history of research and development for over 70
years; however, it has attracted little attention as a semiconductor material for a long time …
years; however, it has attracted little attention as a semiconductor material for a long time …
Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation
Currently, a significant portion (~ 50%) of global warming emissions, such as CO2, are
related to energy production and transportation. As most energy usage will be electrical (as …
related to energy production and transportation. As most energy usage will be electrical (as …
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3: N with high mobility
Activation of implanted donors into a highly-resistive, nitrogen-doped homoepitaxial β-Ga 2
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …
O 3 has been investigated. Nitrogen acceptors with the concentration of∼ 10 17 cm− 3 were …