ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures
Among the different types of multiferroic compounds, bismuth ferrite (BiFeO 3; BFO) stands
out because it is perhaps the only one being simultaneously magnetic and strongly …
out because it is perhaps the only one being simultaneously magnetic and strongly …
Chemical route derived bismuth ferrite thin films and nanomaterials
Bismuth ferrite (BiFeO3–BFO) is a prototypical lead-free single phase multiferroic which
shows strong ferroelectric and antiferromagnetic properties simultaneously, together with …
shows strong ferroelectric and antiferromagnetic properties simultaneously, together with …
High-density array of ferroelectric nanodots with robust and reversibly switchable topological domain states
The exotic topological domains in ferroelectrics and multiferroics have attracted extensive
interest in recent years due to their novel functionalities and potential applications in …
interest in recent years due to their novel functionalities and potential applications in …
Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95Co0.05O3 Film
Perovskite ceramics and single crystals are commonly hard and brittle due to their small
maximum elastic strain. Here, large‐scale BaTi0. 95Co0. 05O3 (BTCO) film with a SrRuO3 …
maximum elastic strain. Here, large‐scale BaTi0. 95Co0. 05O3 (BTCO) film with a SrRuO3 …
Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays
Memristors enter a critical developmental stage where emerging large‐scale integration
methods face major challenges with severe switching instabilities in the oxide layer. Here …
methods face major challenges with severe switching instabilities in the oxide layer. Here …
Resistive switching behavior in ferroelectric heterostructures
ZJ Wang, Y Bai - Small, 2019 - Wiley Online Library
Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …
Enhancing BiVO4 photoanode performance by insertion of an epitaxial BiFeO3 ferroelectric layer
BiVO 4 (BVO) is a promising material as the photoanode for use in photoelectrochemical
applications. However, the high charge recombination and slow charge transfer of the BVO …
applications. However, the high charge recombination and slow charge transfer of the BVO …
All oxide lead-free bismuth ferrite perovskite absorber based FTO/ZnO/BiFeO3/Au solar cell with efficiency∼ 12%: First principle material and macroscopic device …
We report the photovoltaic response of bismuth ferrite (BiFeO 3) multiferroic absorber based
all oxide FTO/ZnO/BiFeO 3/Au solar cell using density functional theory for materials …
all oxide FTO/ZnO/BiFeO 3/Au solar cell using density functional theory for materials …
Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices
Abstract Bismuth ferrite (BiFeO 3, BFO) thin films of various thickness were deposited using
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …