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FinFET to GAA MBCFET: a review and insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Temperature effect on RF/analog and linearity parameters in DMG FinFET
We systemically investigated the impact of variation in temperature on electrical parameters
for a dual material gate (DMG) FinFET. We have highlighted the DC performance such as …
for a dual material gate (DMG) FinFET. We have highlighted the DC performance such as …
Design insights into a junctionless nanosheet FET (JL-NSFET) for switching and analog/RF applications: device to circuit level assessment
The advent in semiconductor technology paved the way for electronic industry to place in
front row. The nanosheet (NS) device is a type gate all around (GAA) architecture provides …
front row. The nanosheet (NS) device is a type gate all around (GAA) architecture provides …
Analytical modeling of a dual-material graded-channel cylindrical gate-all-around FET to minimize the short-channel effects
In this paper, an analytical model for center potential and threshold voltage is developed for
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …
a dual-material graded-channel cylindrical gate-all-around (DMGC CGAA) FET by …
Surface potential modeling of graded-channel gate-stack (GCGS) high-K dielectric dual-material double-gate (DMDG) MOSFET and analog/RF performance study
V Narendar, KA Girdhardas - silicon, 2018 - Springer
In each complementary metal-oxide-semiconductor (CMOS) technology generation, design
of new device architectures at nanoscale regime becomes quite challenging task due to …
of new device architectures at nanoscale regime becomes quite challenging task due to …
A holistic approach on Junctionless dual material double gate (DMDG) MOSFET with high k gate stack for low power digital applications
The 2D analytical models for electrostatic potential, threshold voltage, subthreshold swing,
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Drain Induced Barrier Lowering (DIBL) and drain current of the Dual Material Double Gate …
Performance enhancement of FinFET devices with gate-stack (GS) high-K dielectrics for Nanoscale applications
V Narendar - Silicon, 2018 - Springer
Abstract The Fin shaped Field Effect Transistors (FinFETs), are the front runner of the current
sub-nanometer technology node. The semiconductor industry adopts it in high-performance …
sub-nanometer technology node. The semiconductor industry adopts it in high-performance …
A novel bottom-spacer ground-plane (BSGP) FinFET for improved logic and analog/RF performance
FinFET for system-on-chip (SoC) applications like logic/SRAM need shorter fins, whereas in
analog/RF and global interconnect drivers need taller and multi-fins. To tackle this issue, we …
analog/RF and global interconnect drivers need taller and multi-fins. To tackle this issue, we …
Investigation of short channel effects (SCEs) and analog/RF figure of merits (FOMs) of dual-material bottom-spacer ground-plane (DMBSGP) FinFET
FinFETs are popular and forefront runner in integrated circuits (ICs) technology due to
exceptional scalability and suppressed short channel effects (SCEs). The bottom spacer …
exceptional scalability and suppressed short channel effects (SCEs). The bottom spacer …
Design and optimization of dual material gate junctionless FinFET using dimensional effect, gate oxide and workfunction engineering at 7 nm technology node
R Kusuma, VKHR Talari - Silicon, 2022 - Springer
In this paper, we designed and analyzed the performance of Dual Material Gate
Junctionless FinFET (DMG JLFinFET) using gate engineering with high-k dielectrics for …
Junctionless FinFET (DMG JLFinFET) using gate engineering with high-k dielectrics for …