The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic
materials has driven significant research activity, with the goal of realizing their …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Multiferroic materials have ignited enormous interest owing to their co-existence of
ferroelectricity and ferromagnetism, which hold substantial promise for advanced device …

While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

Thickness scaling of ferroelectricity in Al1− x Sc x N is a determining factor for its potential
application in neuromorphic computing and memory devices. In this letter, ultrathin (10 nm) …

The ferroelectric photovoltaic effect has been extensively studied for possible applications in
energy conversion and photo-electrics. The reversible spontaneous polarization gives rise …

The temperature dependence of ferroelectric properties was investigated for (Al 0.8 Sc 0.2)
N films 9–130 nm thick prepared on (111) Pt/TiO x/SiO 2/Si substrates. The coercive fields (E …

A topical review is given of the physics of submicron ferroelectrics, describing the application
considerations for memory devices (both as switching memory elements for ferroelectric …

A combined experimental and computational investigation of coupling between polarization
and epitaxial strain in highly polar ferroelectric PbZr 0.2 Ti 0.8 O 3 (PZT) thin films is …

The focused ion beam microscope has been used to cut parallel-sided {100}-oriented thin
lamellae of single crystal barium titanate with controlled thicknesses, ranging from 530 nm to …