With the development of microelectronics, the demand for continuously miniaturized feature
sizes has driven continuous progress in lithography technology. Extreme ultraviolet (EUV) …

In this review the basic principles of interference lithography (IL) are described. IL is
emerging as one of the most powerful yet relatively inexpensive methodologies for creating …

Silicon is the undisputed leader for microelectronics among all the industrial materials and
Si nanostructures flourish as natural candidates for tomorrow's technologies due to the rising …

We report experimental and theoretical analysis of the plasmonic resonances of Al
nanoparticles and nanorods. Ordered nanoparticle arrays with well-defined shapes and …

Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for
high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference …

Interference lithography is an effective method of patterning periodic structures with limits set
by light diffraction. Using this method at the short wavelengths of extreme ultraviolet (EUV) …

The 2007 International Technology Roadmap for Semiconductors (ITRS) 1 specifies
Extreme Ultraviolet (EUV) lithography as one leading technology option for the 32nm half …

We discuss the future of resist materials for sub-20-nm lithography and believe that polymer-
bound PAG-based resists will be used to 16-nm node. There has been enough progress in …

The success of the semiconductor industry is based on the ability to fabricate hundreds of
millions of devices on a single chip. In order to fulfill the ever‐shrinking feature sizes, the …

Electron‐induced chemical lithography combined with self‐assembled monolayers and
multivalent chelators for high‐affinity capturing of His‐tagged proteins are used to obtain …