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[HTML][HTML] Conductive bridge random access memory (CBRAM): challenges and opportunities for memory and neuromorphic computing applications
Due to a rapid increase in the amount of data, there is a huge demand for the development
of new memory technologies as well as emerging computing systems for high-density …
of new memory technologies as well as emerging computing systems for high-density …
ZnO based resistive random access memory device: a prospective multifunctional next-generation memory
Numerous works that have demonstrated the study and enhancement of switching
properties of ZnO-based RRAM devices are discussed. Several native point defects that …
properties of ZnO-based RRAM devices are discussed. Several native point defects that …
Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications
In this work, a reliable bilayer flexible memristor is demonstrated using TaOx/HfOx Bi‐layer
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …
Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing
In today's new era, multifunctional devices are most prominent due to their compact design,
reduction in operating cost, and reduced need of being limited to single functional devices …
reduction in operating cost, and reduced need of being limited to single functional devices …
Enhanced linearity in CBRAM synapse by post oxide deposition annealing for neuromorphic computing applications
Artificial synapse with good linearity is a critical issue in conductive bridging random access
memory (CBRAM) synaptic device to accomplish an efficient learning approach in the …
memory (CBRAM) synaptic device to accomplish an efficient learning approach in the …
High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition
The bipolar resistive switching (RS) characteristics of the ZnO-based TiN/Al 2 O 3/ZnO/Al 2 O
3/TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al …
3/TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al …
Negative photo conductivity triggered with visible light in wide bandgap oxide-based optoelectronic crossbar memristive array for photograph sensing and …
Photoresponsivity studies of wide-bandgap oxide-based devices have emerged as a vibrant
and popular research area. Researchers have explored various material systems in their …
and popular research area. Researchers have explored various material systems in their …
Oxygen Vacancy-Dependent Synaptic Dynamic Behavior of TiOx-Based Transparent Memristor
Y She, F Wang, X Zhao, Z Zhang, C Li… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Transparent synaptic devices remain great prospects for a future comprehensive simulation
of artificial synapses with the combination of photoelectric coupling characteristics in the …
of artificial synapses with the combination of photoelectric coupling characteristics in the …
Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing
Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits
as the interface between the optical and electrical domains. However, devices designed …
as the interface between the optical and electrical domains. However, devices designed …
Visible light detection and memory capabilities in MgO/HfO₂ bilayer-based transparent structure for photograph sensing
Photograph response in transparent devices has been a hot area of investigation, with
several material systems being used to generate a response to illumination. In this study, we …
several material systems being used to generate a response to illumination. In this study, we …