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Optical strength of semiconductor laser materials
PG Eliseev - Progress in quantum electronics, 1996 - Elsevier
A review of phenomena of optical damage in semiconductor laser materials is presented
with compilation of empirical data, discussion on theoretical explanation and modeling of …
with compilation of empirical data, discussion on theoretical explanation and modeling of …
Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
SL Yellen, AH Shepard, RJ Dalby… - IEEE journal of …, 1993 - ieeexplore.ieee.org
Results of reliability studies of GaInP (0.6-0.7 mu m); AlGaAs, InAlGaAs, and InGaAsP (0.81
mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are …
mu m); GaAs (0.86 mu m); and InGaAs (0.9-1.1 mu m) quantum-well laser diodes are …
Defects in gaas
V Swaminathan - Bulletin of Materials Science, 1982 - Springer
A comprehensive review of defects in GaAs with focus on native point defects and
dislocations is given. The effects of these defects on devices are also considered. It is …
dislocations is given. The effects of these defects on devices are also considered. It is …
Degradation behavior of 0.98-/spl mu/m strained quantum well InGaAs/AlGaAs lasers under high-power operation
M Fukuda, M Okayasu, J Temmyo… - IEEE Journal of …, 1994 - ieeexplore.ieee.org
The degradation behavior of 0.98-/spl mu/m strained quantum well (QW) InGaAs/AlGaAs
lasers with facet coating films is systematically clarified at high-power operations of more …
lasers with facet coating films is systematically clarified at high-power operations of more …
Degradation of III–V Opto‐Electronic Devices
O Ueda - Journal of the Electrochemical Society, 1988 - iopscience.iop.org
The current status and understanding of various degradation phenomena in III-V opto-
electronic devices, especially, GaAs-and InP-based double-heterostructure lasers and light …
electronic devices, especially, GaAs-and InP-based double-heterostructure lasers and light …
On the strain in n-type GaN
It was demonstrated that Ge has the same effect as Si on the strain evolution in n-type GaN
as measured by x-ray diffraction. Dislocation inclination, which causes tensile strain in n …
as measured by x-ray diffraction. Dislocation inclination, which causes tensile strain in n …
Room-temperature continuous-wave operation of blue-green CdZnSSe/ZnSSe quantum well laser diodes
KK Law, PF Baude, TJ Miller, MA Haase, GM Haugen… - Electronics Letters, 1996 - IET
Room temperature continuous wave operation of CdZnSSe/ZnSSe quantum well laser
diodes based on wide-gap II-VI semiconductors with lifetimes> 3 h has been demonstrated …
diodes based on wide-gap II-VI semiconductors with lifetimes> 3 h has been demonstrated …
Devices and materials for 4 μm-band fibre-optical communication
CHL Goodman - IEE Journal on Solid-State and Electron Devices, 1978 - IET
The possibilities of optical communication at 4 μ m wavelength are discussed. New
materials are proposed for optical fibres capable of very low loss at this wavelength. The …
materials are proposed for optical fibres capable of very low loss at this wavelength. The …
Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers
DP Bour, DB Gilbert, KB Fabian… - IEEE Photonics …, 1990 - ieeexplore.ieee.org
A 10000 h, 30 degrees C constant-current lifetest performed on five strained In/sub
0.2/Ga/sub 0.8/As/AlGaAs single-quantum-well lasers, with lambda approximately 930 nm …
0.2/Ga/sub 0.8/As/AlGaAs single-quantum-well lasers, with lambda approximately 930 nm …
Stress-modulated composition in the vicinity of dislocations in nearly lattice matched AlInN/GaN heterostructures: A possible explanation of defect insensitivity
Evidence of composition fluctuations around threading dislocations at scales ranging from
atomic distances to tens of nanometers is provided by z-contrast imaging, strain …
atomic distances to tens of nanometers is provided by z-contrast imaging, strain …