A review on the optical properties of some germanium based chalcogenide thin films and their applications
Chalcogenide materials are an important class of amorphous glassy semiconductors and
attracted several researchers due to their practical applications in several fields like phase …
attracted several researchers due to their practical applications in several fields like phase …
Photoinduced effects for amorphous chalcogenide semiconductors
Chalcogenide glasses present diverse, fascinating photoinduced behavior when they are
illuminated with photons. One of the thrust photoinduced phenomena in chalcogenide thin …
illuminated with photons. One of the thrust photoinduced phenomena in chalcogenide thin …
Optoelectrical properties of Ge10Se90 and Ge10Se85Cu5 thin films illuminated by laser beams
The laser irradiation effect on the optoelectrical properties of Ge 10 Se 90 and Ge 10 Se 85
Cu 5 thin films in the view of Cu-do** effect has been investigated. The illumination effect …
Cu 5 thin films in the view of Cu-do** effect has been investigated. The illumination effect …
Role of Ge:As ratio in controlling the light-induced response of a-GexAs35−xSe65 thin films
In this paper, we present interesting results on the quantification of photodarkening (PD),
photobleaching (PB) and transient PD (TPD) in a-GexAs35− xSe65 thin films as a function of …
photobleaching (PB) and transient PD (TPD) in a-GexAs35− xSe65 thin films as a function of …
Light-induced effects in amorphous chalcogenide glasses: Femtoseconds to seconds
Amorphous chalcogenide glasses are intrinsically metastable, highly photosensitive, and
therefore exhibit numerous light-induced effects upon bandgap and sub-bandgap …
therefore exhibit numerous light-induced effects upon bandgap and sub-bandgap …
Observation of photobleaching in Ge-deficient Ge16.8Se83.2 chalcogenide thin film with prolonged irradiation
S Zhang, Y Chen, R Wang, X Shen, S Dai - Scientific Reports, 2017 - nature.com
We presented the unusual result of photobleaching (PB) in Ge-deficient Ge16. 8Se83. 2 thin
films with continuous irradiation with 560 nm laser for 12000 s, which is contradicted with the …
films with continuous irradiation with 560 nm laser for 12000 s, which is contradicted with the …
Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films
T Halenkovič, M Kotrla, J Gutwirth, V Nazabal… - Photonics …, 2022 - opg.optica.org
The kinetics of photoinduced changes, namely, photobleaching and photodarkening in
sputtered ternary Ge_29Sb_8Se_63 thin films, was studied. The study of time evolution of …
sputtered ternary Ge_29Sb_8Se_63 thin films, was studied. The study of time evolution of …
[HTML][HTML] Surface plasmon enhanced light-induced changes in Ge-Se amorphous chalcogenide–gold nanostructures
In this paper, the plasmon field enhanced light-induced changes are investigated in the
amorphous Ge 24 Se 76 layer incorporating Au nanoparticles. The presence of gold …
amorphous Ge 24 Se 76 layer incorporating Au nanoparticles. The presence of gold …
Photo-induced effects in Ge-As-Se films in various states
Z Zhang, S Xu, Y Chen, X Shen, R Wang - Optical Materials Express, 2020 - opg.optica.org
Amorphous Ge-As-Se thin films have been prepared by the magnetron sputtering deposition
technique, and the photo-induced effects (PIEs) in the different states have been …
technique, and the photo-induced effects (PIEs) in the different states have been …
The effect of Se do** on spectroscopic and electrical properties of GeTe
EM Vinod, KS Sangunni - Thin Solid Films, 2014 - Elsevier
Selenium doped thin films of GeTe alloys were investigated for their structural modifications
by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron …
by X-ray Diffraction, Fourier Transform Infrared Spectroscopy, X-ray photoelectron …