Erbium‐doped integrated waveguide amplifiers and lasers

JDB Bradley, M Pollnau - Laser & Photonics Reviews, 2011 - Wiley Online Library
Erbium‐doped fiber devices have been extraordinarily successful due to their broad optical
gain around 1.5–1.6 µm. Er‐doped fiber amplifiers enable efficient, stable amplification of …

Optically pumped planar waveguide lasers: Part II: Gain media, laser systems, and applications

C Grivas - Progress in Quantum Electronics, 2016 - Elsevier
The field of optically pumped planar waveguide lasers has seen a rapid development over
the last two decades driven by the requirements of a range of applications. This sustained …

Broadband sensitizers for erbium-doped planar optical amplifiers

A Polman, FCJM van Veggel - Journal of the Optical Society of …, 2004 - opg.optica.org
Three different broadband sensitization concepts for optically active erbium ions are
reviewed: 1) silicon nanocrystals, with absorption over the full visible spectrum, efficiently …

Nanosilicon photonics

N Daldosso, L Pavesi - Laser & Photonics Reviews, 2009 - Wiley Online Library
Silicon photonics is no longer an emerging field of research and technology but a present
reality with commercial products available on the market, where low‐dimensional silicon …

Nanocrystals for silicon-based light-emitting and memory devices

SK Ray, S Maikap, W Banerjee… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanocrystals (NCs), representing a zero-dimensional system, are an ideal platform for
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …

[HTML][HTML] Routes toward silicon-based lasers

L Pavesi - Materials Today, 2005 - Elsevier
Silicon, the material par excellence for electronics, is not used for light sources because of
the lack of efficient light emitters and lasers. In this review, I will discuss the physical reasons …

Efficient luminescence and energy transfer in erbium silicate thin films

M Miritello, R Lo Savio, F Iacona, G Franzò… - Advanced …, 2007 - Wiley Online Library
Currently, electrical interconnections based on metal lines represent the most important
limitation on the performances of silicon-based microelectronic devices. The parasitic …

Light emission from silicon-rich nitride nanostructures

L Dal Negro, JH Yi, LC Kimerling, S Hamel… - Applied Physics …, 2006 - pubs.aip.org
Light-emitting Si-rich silicon nitride (SRN) films were fabricated by plasma enhanced
chemical vapor deposition followed by low temperature (500–900 C) annealing. The optical …

Sensitization of Er luminescence by Si nanoclusters

M Wojdak, M Klik, M Forcales, OB Gusev… - Physical Review B …, 2004 - APS
Sensitization of Er emission by Si nanoclusters (Si-nc) is investigated with pulsed and
continuous optical pum**, in and off resonance with excited states of Er 3+ ion. We show …

[КНИГА][B] Fibre optic communication: key devices

H Venghaus, N Grote - 2017 - books.google.com
The book gives an in-depth description of key devices of current and next generation fibre
optic communication networks. Devices treated include semiconductor lasers, optical …